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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBGWolfspeed Launches New 3.3 kV SiC Power Module Families for AI Infrastructure and Grid Modernization
May 21, 2026
2 Min ReadWolfspeed has introduced two new 3.3 kV silicon carbide power module families aimed at addressing rising power conversion demands driven by AI data centers, renewable energy systems, and broader electrification trends.
The launch includes a high-power half-bridge baseplate module for applications exceeding 800 A, as well as a scalable full-bridge baseplate-less module under the WolfPACK® platform. Both are designed around industry-standard footprints and target next-generation medium-voltage power architectures.
The baseplate module is optimized for high-power applications such as solar inverters, wind energy systems, and grid-scale storage, while the WolfPACK® family is focused on modular solid-state transformer (SST) architectures and renewable energy infrastructure. The flexibility of the baseplate-less approach enables series-stacked and multi-level converter configurations, supporting scalable high-voltage systems.
Technically, both module families are designed for continuous 24/7 operation in 2 kV+ DC-link environments. They incorporate advanced packaging technologies such as sintered die attach, improved encapsulation materials, and enhanced cosmic ray robustness to improve reliability and power cycling performance.
From a performance perspective, the new baseplate module reportedly delivers up to 42% lower switching losses compared to competing SiC solutions and more than 90% lower losses compared to traditional IGBT systems under comparable operating conditions. The WolfPACK® architecture also enables significant reductions in system footprint, supporting more compact solid-state transformer designs.
Original – Wolfspeed
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Toshiba Electronics Europe GmbH has begun test-sample shipments of its new TW007D120E, a 1200 V trench-gate silicon carbide MOSFET targeting high-efficiency power systems for AI data centers and other high-power infrastructure applications.
The device is packaged in a top-side cooled QDPAK format, enabling improved thermal dissipation and higher power density—critical requirements for next-generation AI server power supplies and emerging 800 V HVDC data center architectures. In addition to AI infrastructure, the MOSFET is also positioned for renewable energy systems, UPS equipment, EV charging stations, and energy storage applications.
Technically, the TW007D120E utilizes Toshiba’s proprietary trench-gate SiC structure to significantly improve on-resistance per unit area. The device achieves a typical RDS(on) of 7.0 mΩ with 172 A drain current capability and 33 nC gate-drain charge. Compared with Toshiba’s previous-generation 1200 V SiC MOSFET, the new product reduces specific on-resistance by approximately 58% and improves the key switching/conduction loss figure-of-merit by around 52%.
The device also supports lower gate drive voltages between 15 V and 18 V, helping reduce system complexity and power losses while improving overall efficiency.
Original – Toshiba
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Analog Devices, Inc. has agreed to acquire Empower Semiconductor in an all-cash transaction valued at $1.5 billion, expanding ADI’s capabilities in AI-focused power delivery technologies including integrated voltage regulators (IVRs) and silicon capacitors.
The acquisition directly targets one of the most critical bottlenecks in AI infrastructure: delivering high-density, energy-efficient power to increasingly power-hungry AI processors. As hyperscale AI systems scale toward higher compute densities, power delivery efficiency and thermal constraints are becoming major system-level limitations.
Empower’s technology portfolio focuses on ultra-compact, high-speed integrated voltage regulation and silicon capacitor solutions that enable power conversion closer to AI processors. This shortens the power delivery path, reduces losses, improves transient response, and increases overall compute density — key priorities for next-generation AI servers and accelerators.
Strategically, the deal strengthens ADI’s position as a “grid-to-core” power partner for hyperscalers and AI silicon developers. The company is moving beyond discrete power management ICs toward broader system-level power architectures that span from high-voltage infrastructure down to processor-level voltage regulation.
Empower’s FinFast™ technology is already deployed in production silicon capacitor solutions, while its IVR programs are being developed alongside major hyperscalers and AI chip providers. ADI plans to accelerate commercialization using its manufacturing scale, customer relationships, and power management portfolio.
Beyond AI data centers, the combined technology portfolio could also support high-performance computing, networking, telecommunications, aerospace, and other compute-intensive applications where power density and thermal efficiency are becoming limiting factors.
The acquisition is expected to close in the second half of 2026, subject to regulatory approvals and customary closing conditions.
Original – Analog Devices
