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onsemi has expanded its long-term collaboration with NIO Inc. to support the transition to next-generation 900 V electric vehicle architectures, leveraging its EliteSiC technology.
The partnership builds on an existing multi-year relationship, evolving from earlier 400 V platforms to advanced 900 V systems. onsemi’s EliteSiC enhanced M3e technology will be deployed across NIO’s upcoming vehicle lineup, including flagship models such as the ES9, which will be showcased at the 2026 Beijing Auto Show.
From a technology standpoint, the EliteSiC platform delivers improved switching performance and reduced energy losses, particularly through enhanced body diode characteristics. This translates into higher drivetrain efficiency, better thermal performance, and increased system robustness. End-user benefits include extended driving range, faster charging times enabled by high-voltage architectures, and more consistent vehicle performance under demanding conditions.
Strategically, this collaboration highlights the industry-wide shift toward higher-voltage EV platforms (800 V–1000 V), which are becoming essential for enabling ultra-fast charging and improving overall system efficiency. It also reflects a broader trend of deeper system-level collaboration between automakers and semiconductor suppliers, moving beyond component sourcing toward co-development of powertrain architectures.
From a market perspective, onsemi continues to strengthen its position in the automotive SiC segment, competing with major players such as Infineon, STMicroelectronics, and Wolfspeed. Partnerships like this are critical for securing long-term design wins in EV platforms, where semiconductor content per vehicle is rapidly increasing.
Overall, the expanded agreement reinforces the growing importance of silicon carbide in next-generation EVs and underscores how close OEM–supplier alignment is becoming a key competitive differentiator in the electrification landscape.
Original – onsemi
