CVD Equipment Demonstrates High-Quality SiC Boule Growth with PVT Systems

CVD Equipment Corporation announced the successful growth of high-quality single-crystal silicon carbide (SiC) boules using its Physical Vapor Transport (PVT) systems, with validation performed by Stony Brook University under the onsemi Research Center for Wide Bandgap Materials.

The produced SiC boule demonstrated a 4H crystal structure with low defect density and no polytype inclusions, confirming material quality suitable for advanced power semiconductor applications. The result validates CVDE’s PVT equipment capability in supporting next-generation SiC substrate manufacturing.

This collaboration underscores the importance of academic–industry partnerships in advancing wide bandgap materials and highlights CVDE’s positioning within the SiC equipment ecosystem. As demand for high-performance SiC substrates accelerates across EVs, industrial power, and AI data center infrastructure, scalable and high-yield crystal growth remains a critical bottleneck in the supply chain.

The achievement strengthens CVDE’s role as an enabling technology provider in the SiC value chain, with potential implications for future equipment demand as the industry continues to expand material capacity.

Original – CVD Equipment