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CVD Equipment Corporation announced the successful growth of high-quality single-crystal silicon carbide (SiC) boules using its Physical Vapor Transport (PVT) systems, with validation performed by Stony Brook University under the onsemi Research Center for Wide Bandgap Materials.
The produced SiC boule demonstrated a 4H crystal structure with low defect density and no polytype inclusions, confirming material quality suitable for advanced power semiconductor applications. The result validates CVDE’s PVT equipment capability in supporting next-generation SiC substrate manufacturing.
This collaboration underscores the importance of academic–industry partnerships in advancing wide bandgap materials and highlights CVDE’s positioning within the SiC equipment ecosystem. As demand for high-performance SiC substrates accelerates across EVs, industrial power, and AI data center infrastructure, scalable and high-yield crystal growth remains a critical bottleneck in the supply chain.
The achievement strengthens CVDE’s role as an enabling technology provider in the SiC value chain, with potential implications for future equipment demand as the industry continues to expand material capacity.
Original – CVD Equipment
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ROHM Co., Ltd. has developed its 5th-generation EcoSiC™ MOSFETs, targeting improved efficiency and performance in high-power applications such as electric vehicles, AI data centers, and industrial power systems.
The new generation delivers a significant performance improvement over previous devices, with approximately 30% lower ON-resistance at high temperatures (175°C) compared to 4th-generation SiC MOSFETs under similar conditions. This reduction directly translates into lower conduction losses, enabling higher efficiency, increased power density, and more compact system designs—particularly critical for traction inverters and high-performance power supplies.
The technology is positioned to address two major market drivers. In automotive, it supports longer EV driving range and faster charging through more efficient inverters and onboard chargers. In parallel, the rapid expansion of AI infrastructure and data centers is increasing power density requirements, making efficient power conversion a key bottleneck for system scalability.
ROHM has a long-standing position in SiC, having started mass production as early as 2010. Its 4th-generation devices have already seen broad adoption across automotive and industrial markets. The 5th-generation platform builds on this foundation with structural and process optimizations that enhance high-temperature performance—an increasingly important factor as power systems operate under more demanding conditions.
Commercially, ROHM began offering bare die versions in 2025 and completed development in March 2026. Sampling of discrete devices and modules based on the new generation is scheduled to begin in July 2026, with further expansion planned across voltage classes and packaging options.
From a market perspective, this launch reinforces the transition of silicon carbide into a mainstream power semiconductor technology. As electrification and AI-driven power demand accelerate, improvements in efficiency and thermal performance at the device level are becoming critical enablers for next-generation systems. ROHM’s latest generation strengthens its competitive positioning in the increasingly crowded SiC landscape, where performance gains at high temperature and high power are key differentiators.
Original – ROHM
