Robert Bosch GmbH has unveiled its third-generation silicon carbide (SiC) MOSFET technology, delivering significant improvements in efficiency, thermal performance, and robustness for electric vehicle (EV) power electronics.
Built on Bosch’s established dual-channel trench architecture, the Gen 3 devices introduce four key structural enhancements that collectively improve performance while maintaining manufacturability. These advancements result in a 20% reduction in specific on-resistance, approximately 10% improvement in short-circuit withstand capability, and a 40% thinner die, enabling better heat dissipation and higher power density.
From a system perspective, these improvements translate into more efficient traction inverters, reduced energy losses, and more compact module designs. The optimized capacitance characteristics also reduce switching losses by around 10%, further enhancing overall inverter efficiency.
A key innovation is the introduction of an additional p-type shielding region beneath the trench, improving electric field control and long-term gate oxide reliability. Additionally, a refined two-zone JFET structure enhances the trade-off between conduction performance and short-circuit robustness—one of the critical challenges in SiC device design.
The reduction in die thickness to approximately 100 µm improves thermal conductivity and lowers material usage, supporting both performance gains and cost efficiency. Combined with Bosch’s transition to 200 mm SiC wafer manufacturing, this enables higher output per wafer and improved scalability.
Strategically, Bosch is positioning Gen 3 SiC MOSFETs to move beyond premium EV segments into mass-market applications. While SiC adoption has historically been concentrated in high-end vehicles due to cost, these efficiency gains and manufacturing improvements help lower system costs, accelerating broader adoption across the automotive market.
From a market perspective, this development reinforces the ongoing shift toward SiC in automotive power electronics, particularly in traction inverters. As EV volumes scale globally, innovations that improve cost-performance balance—such as Bosch’s Gen 3 platform—are critical to expanding SiC penetration across all vehicle segments.
Original – Bosch