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Efficient Power Conversion has introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, expanding its portfolio of GaN-based motor drive platforms for high-power applications up to 5 kW.
The new boards are designed as three-phase BLDC inverter platforms and target a wide range of applications including robotics, industrial automation, light electric vehicles, agricultural machinery, and high-power drones. Both platforms are built on EPC’s 100 V EPC2361 eGaN FET technology, delivering improved conduction performance and enabling higher current operation compared to previous designs.
The EPC9186HC2 integrates two GaN devices in parallel per switch position, while the EPC9186HC3 uses three in parallel, further reducing effective on-resistance and improving efficiency at higher load conditions. The systems support phase currents up to 150 ARMS and switching frequencies up to 120 kHz, enabling high power density and fast dynamic response.
From a performance standpoint, the use of GaN enables lower gate charge and output capacitance compared to silicon MOSFETs, resulting in faster switching, reduced losses, and smaller passive components. The boards also maintain controlled switching behavior (dv/dt ~6 V/ns), helping reduce torque ripple and acoustic noise—key requirements in precision motor control.
The platforms integrate essential system functions including gate drivers, current sensing, voltage monitoring, and protection features, and support both sensorless and encoder-based control. Compatibility with controller ecosystems from major suppliers such as Microchip, Texas Instruments, and STMicroelectronics allows for rapid system integration.
From a market perspective, these evaluation platforms highlight the continued expansion of GaN into motion control and electrification applications beyond power supplies. As demand grows for compact, efficient motor drives in robotics and e-mobility, GaN is increasingly positioned as a key enabler of higher switching frequencies, improved efficiency, and reduced system size.
This launch reinforces EPC’s strategy of accelerating GaN adoption by providing system-level tools that reduce development time and enable engineers to validate next-generation inverter architectures in real-world applications.
Original – Efficient Power Conversion
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Navitas Semiconductor has appointed Gregory M. Fischer to its Board of Directors, effective immediately, strengthening its leadership as the company scales in high-growth power semiconductor markets.
Fischer brings more than 40 years of semiconductor industry experience, having held senior leadership roles at major companies including Broadcom, Conexant Systems, and Rockwell. He currently serves as an independent director at Semtech and advises multiple technology firms, adding governance and strategic expertise to Navitas’ board.
At Navitas, Fischer will serve on the Compensation and Executive Steering committees and is expected to support the company’s transition toward its next growth phase, often referred to as “Navitas 2.0,” focused on scaling GaN and high-voltage SiC solutions.
From a strategic perspective, this appointment comes at a pivotal time as Navitas targets expansion in AI data centers, energy infrastructure, and industrial electrification. Strengthening board-level expertise is critical as the company navigates rapid growth, increasing competition, and the transition from innovation-driven scaling to sustained profitability.
Fischer’s background in both operational leadership and board governance is particularly relevant as Navitas continues to commercialize its GaNFast and GeneSiC portfolios across high-power applications.
From a market standpoint, the move reflects a broader trend among power semiconductor companies to reinforce leadership teams with experienced executives capable of guiding growth through capital-intensive expansion cycles and evolving end-market dynamics, especially in AI-driven and electrification markets.
Original – Navitas Semiconductor
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Micro Commercial Components has launched the MCTLD58N04Y, a 40 V N-channel MOSFET engineered for high-current power applications such as motor drivers, power tools, and industrial power systems.
The device features an ultra-low RDS(on) of 0.58 mΩ and supports a high continuous drain current of up to 639 A (depending on thermal conditions), enabling efficient conduction and stable operation under heavy load. This combination is particularly valuable in low-voltage, high-current designs where minimizing conduction losses is critical.
Built on split-gate trench MOSFET technology, the MCTLD58N04Y delivers low switching losses and improved efficiency, supporting compact system designs where thermal management and board space are key constraints. The MOSFET also offers strong avalanche ruggedness, making it suitable for handling transient and inductive load conditions commonly found in motor drive and industrial environments.
The device is housed in a thermally efficient TOLL-8L package, which provides low thermal resistance and effective heat dissipation, supporting reliable operation in demanding applications.
From a market perspective, this product aligns with the growing demand for high-current, low-voltage MOSFETs in electrified systems, including battery-powered tools, industrial automation, and emerging 48 V architectures. While wide-bandgap technologies dominate higher voltage segments, advanced silicon MOSFETs like this remain essential for optimizing efficiency and cost in low-voltage, high-current stages.
MCC’s latest release reinforces its focus on delivering high-performance silicon solutions for mainstream power applications where scalability, robustness, and cost-effectiveness are key decision factors.
Original – Micro Commercial Components
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Alpha and Omega Semiconductor Limited has inaugurated a new OSAT (Outsourced Semiconductor Assembly and Test) facility in Sanand, Gujarat, in partnership with Kaynes Semicon, marking a significant expansion of its global manufacturing footprint.
The facility has commenced high-volume production of AOS’s IPM5 (Intelligent Power Modules), which integrate 17 dies into a single package to enable advanced motor control and energy-efficient applications. The implementation of AOS’s proprietary IPM5 process at the site represents a key step in localizing advanced semiconductor packaging capabilities in India.
The project aligns with the broader objectives of the India Semiconductor Mission and highlights increasing momentum toward regional diversification of semiconductor supply chains. The rapid execution—from groundbreaking to production in just 14 months—demonstrates accelerated ecosystem development in India’s semiconductor manufacturing landscape.
From a strategic perspective, the collaboration combines AOS’s device and module expertise with Kaynes Semicon’s manufacturing capabilities, creating a scalable platform for both domestic and global markets. The facility is positioned not only to serve India’s growing demand for power semiconductors but also to support international supply chains under a “Made in India, for the World” approach.
From a market standpoint, this move reflects a broader industry trend toward geographic diversification of backend manufacturing, particularly in power semiconductors where packaging and integration (e.g., IPMs) are critical value drivers. It also underscores India’s emerging role as a strategic hub for OSAT and power electronics manufacturing, supported by government initiatives and increasing global investment.
Original – Alpha and Omega Semiconductor
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Magnachip Semiconductor Corporation will present its latest power semiconductor innovations at PCIM Europe 2026 (Hall 6, Booth 337, June 9–11 in Nuremberg), highlighting its strategic expansion beyond consumer electronics into automotive, industrial, and energy applications.
At the event, Magnachip will showcase a broad portfolio including MOSFETs, IGBTs, and Power ICs, with a strong focus on motor control and power conversion solutions. The company is positioning its technologies to address growing demand across electric vehicles, industrial automation, robotics, and AI-driven infrastructure.
A key theme of the exhibition is Magnachip’s transition from its established strength in consumer electronics—where it has long supplied major global brands—toward higher-value industrial and automotive markets. This includes IGBT and module solutions for high-power applications such as solar inverters, energy storage systems (ESS), and AI servers, supported by advanced packaging technologies for improved power density and thermal performance.
The company will also emphasize its growing capabilities in motor control, including solutions for EV traction inverters and industrial drives. Collaboration with Hyundai Mobis is highlighted as a strategic step to strengthen its position in electrified mobility and inverter technologies.
From a market perspective, Magnachip’s presence at PCIM reflects a broader strategic pivot toward higher-growth, higher-margin segments within the power semiconductor industry. As demand accelerates in electrification, automation, and AI infrastructure, suppliers are increasingly diversifying beyond traditional consumer markets to capture new opportunities in industrial and automotive power systems.
With over 55 new products launched in 2025 and more than 40 additional releases planned for 2026, Magnachip is signaling an aggressive roadmap to enhance its competitiveness in the evolving power semiconductor landscape.
Original – Magnachip Semiconductor
