Magnachip Semiconductor Corporation has introduced its 8th-generation 40 V and 60 V medium-voltage (MV) MOSFETs, aimed at improving efficiency and power density in server and high-performance computing (HPC) power supply units.
The new devices are optimized for synchronous rectification (SR) stages, a critical part of modern server power architectures. Leveraging advanced split-gate trench (SGT) technology, the 40 V variants deliver up to 40% higher current density and approximately 25% faster switching speeds compared to the previous generation, while the 60 V versions achieve up to 50% higher current density and 60% faster switching.
Additional enhancements include fast anti-parallel diode technology to improve switching stability and reduce residual current effects. The MOSFETs support operation up to 175°C and are packaged in compact PDFN56 formats, enabling high-density designs required in AI servers and HPC systems.
Magnachip is expanding its portfolio with multiple RDS(on) options, including 0.8 mΩ and 1.0 mΩ (40 V) and 1.05 mΩ (60 V), following the earlier release of a 0.7 mΩ device. This broader lineup allows designers to optimize trade-offs between efficiency, thermal performance, and cost.
From a market perspective, this launch directly targets the fast-growing server power supply segment, driven by AI and data center expansion. Industry projections indicate steady growth in this market, reinforcing demand for high-efficiency, low-voltage power semiconductors.
Strategically, Magnachip is strengthening its position in the competitive low- to mid-voltage MOSFET space, where silicon technologies continue to dominate critical power stages despite the rise of GaN and SiC. By focusing on performance improvements in synchronous rectification, the company is addressing a key bottleneck in power conversion efficiency for next-generation computing infrastructure.
Original – Magnachip Semiconductor