Taiwan Semiconductor has expanded its silicon carbide portfolio with new automotive-grade 1200 V SiC Schottky diodes in 1 A and 2 A variants, targeting compact, high-efficiency power conversion applications.
The newly introduced devices are offered in SOD-128 packages, positioning them among the smallest high-voltage SiC diodes available in the market. This enables significant board space reduction while maintaining high performance in low-current, high-voltage applications.
The diodes deliver low forward voltage (maximum 1.5 V), very low leakage current, and fast switching characteristics, minimizing both conduction and switching losses. With a maximum junction temperature of 175°C and AEC-Q qualification, they are designed for high-reliability environments, including automotive and industrial systems.
Key application areas include auxiliary power supplies, gate driver bias circuits, snubber networks, PFC stages in low-power designs, and high-frequency flyback converters. Their compact form factor is particularly advantageous in space-constrained designs such as EV subsystems and distributed power architectures.
From a market perspective, this launch reflects a growing trend toward miniaturized wide-bandgap components addressing niche but critical functions in power systems. While much of the SiC market focuses on high-current devices, Taiwan Semiconductor is targeting the underserved low-current, high-voltage segment—supporting increasing system complexity in automotive electrification, AI power delivery, and industrial electronics.
By combining automotive qualification with ultra-compact packaging, the company strengthens its position in differentiated SiC niches where size, efficiency, and reliability are key design drivers.
Original – Taiwan Semiconductor