Toshiba America Electronic Components, Inc. presented its latest power semiconductor innovations at APEC 2026, with a focus on improving efficiency, power density, and system reliability across automotive, data center, and industrial applications.
A key highlight is the new UMOS 11 MOSFET family, which delivers improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation. These enhancements support higher efficiency and compact system designs, particularly in applications requiring fast switching and low conduction losses.
Toshiba is also emphasizing advanced packaging and wide bandgap technologies. This includes its top-side cooled TOGT package, designed to improve thermal dissipation in high power-density systems by transferring heat directly to the heatsink rather than the PCB. In parallel, the company is showcasing its latest SiC modules and 750V/1200V SiC devices targeting grid infrastructure and automotive inverters, alongside ongoing GaN developments for both low- and high-voltage applications.
Beyond discrete devices, Toshiba is presenting a broad system-level portfolio including microcontrollers, motor control solutions, and protection ICs, supported by reference designs such as 3kW server power supplies, automotive ECU power architectures, and motor drive systems.
From a market perspective, Toshiba’s APEC presence underscores a key industry trend: convergence of silicon, SiC, and GaN technologies within unified platforms to address diverse power requirements. Its vertically integrated manufacturing model remains a strategic differentiator, ensuring supply stability and quality—critical factors as demand accelerates in AI data centers, electrified mobility, and renewable energy systems.
Original – Toshiba