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Power Integrations has introduced its new TOPSwitchGaN™ IC family at APEC 2026, significantly extending the usable power range of flyback converters up to 440 W—well beyond traditional limits that typically required more complex resonant or LLC topologies.
The new devices combine the company’s PowiGaN™ technology with its established TOPSwitch™ architecture, enabling simpler, more efficient power supply designs while reducing system complexity, component count, and overall cost. This marks a notable architectural shift, allowing engineers to use flyback topologies in applications that previously required more advanced converter designs.
TOPSwitchGaN devices achieve up to 92% efficiency across a wide load range (10% to 100%) while maintaining standby power consumption below 50 mW, meeting stringent energy efficiency standards without requiring synchronous rectification. The integration of 800 V GaN switches enables lower conduction and switching losses, along with operation at switching frequencies up to 150 kHz, reducing transformer size and improving power density.
From a design perspective, the expanded flyback capability simplifies development cycles and improves manufacturability. The ICs are offered in both low-profile surface-mount and through-hole packages, supporting a wide range of applications from compact consumer devices to higher-power industrial systems such as e-bike chargers and appliances.
Strategically, this development reinforces a broader trend in the power semiconductor market: GaN is not only improving efficiency but also reshaping power architecture choices. By pushing flyback into higher power ranges, Power Integrations is enabling cost-effective alternatives to LLC and resonant designs—particularly relevant for mid-power segments where simplicity, size, and cost are critical.
This innovation positions the company to capture growing demand across consumer, industrial, and light mobility applications, while further accelerating GaN adoption in mainstream power conversion designs.
Original – Power Integrations
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Infineon Technologies AG and DG Matrix have announced a strategic collaboration to enhance power conversion efficiency for AI data centers and industrial electrification through advanced solid-state transformer (SST) technology.
As part of the partnership, DG Matrix will integrate Infineon’s latest-generation silicon carbide (SiC) devices into its Interport™ multi-port SST platform. This integration is expected to improve efficiency, power density, and reliability while strengthening DG Matrix’s semiconductor supply chain as it scales deployments globally.
Solid-state transformers represent a key shift from traditional copper- and iron-based systems, enabling significantly smaller and lighter designs—up to 14 times smaller and 40 times lighter—while offering faster deployment and enhanced control of voltage, power quality, and energy flow. These systems are increasingly critical for connecting medium-voltage grids directly to low-voltage applications such as AI data centers, EV charging infrastructure, renewable energy systems, and industrial microgrids.
From a market perspective, this collaboration highlights the growing importance of SiC in next-generation grid infrastructure. Infineon estimates the semiconductor market for SSTs could reach up to $1 billion within the next five years, driven by rising electricity demand from AI and electrification trends.
The partnership also reflects a broader industry shift toward system-level innovation, where advanced semiconductor technologies like SiC are enabling new power architectures. DG Matrix’s multi-port SST design, combined with Infineon’s SiC roadmap, positions both companies to capitalize on emerging high-voltage, high-efficiency infrastructure requirements.
Looking ahead, the two companies plan continued alignment on future SiC developments as DG Matrix expands toward higher-voltage platforms and larger-scale deployments, supporting the transition to more efficient and resilient global power systems.
Original – Infineon Technologies
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Toshiba America Electronic Components, Inc. presented its latest power semiconductor innovations at APEC 2026, with a focus on improving efficiency, power density, and system reliability across automotive, data center, and industrial applications.
A key highlight is the new UMOS 11 MOSFET family, which delivers improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation. These enhancements support higher efficiency and compact system designs, particularly in applications requiring fast switching and low conduction losses.
Toshiba is also emphasizing advanced packaging and wide bandgap technologies. This includes its top-side cooled TOGT package, designed to improve thermal dissipation in high power-density systems by transferring heat directly to the heatsink rather than the PCB. In parallel, the company is showcasing its latest SiC modules and 750V/1200V SiC devices targeting grid infrastructure and automotive inverters, alongside ongoing GaN developments for both low- and high-voltage applications.
Beyond discrete devices, Toshiba is presenting a broad system-level portfolio including microcontrollers, motor control solutions, and protection ICs, supported by reference designs such as 3kW server power supplies, automotive ECU power architectures, and motor drive systems.
From a market perspective, Toshiba’s APEC presence underscores a key industry trend: convergence of silicon, SiC, and GaN technologies within unified platforms to address diverse power requirements. Its vertically integrated manufacturing model remains a strategic differentiator, ensuring supply stability and quality—critical factors as demand accelerates in AI data centers, electrified mobility, and renewable energy systems.
Original – Toshiba
