Toshiba Electronic Devices & Storage Corporation has introduced the TK058V60Z5, a new 600V N-channel power MOSFET in its DTMOSVI High-Speed Diode (HSD) series, targeting high-efficiency switched-mode power supplies for industrial applications such as data center servers and photovoltaic inverters.
The new device delivers a typical drain-source on-resistance of 0.050Ω, the lowest within Toshiba’s 600V MOSFET portfolio featuring integrated fast-recovery diodes in a DFN8×8 package. With this addition, the DTMOSVI 600V HSD lineup expands to seven products, enhancing design flexibility for power engineers.
A key differentiator is the integration of lifetime control technology to significantly improve body diode performance. Compared to previous generations without fast-recovery diodes, the new series achieves approximately 60% reduction in reverse recovery time (trr) and around 85% lower reverse recovery charge (Qrr), directly translating into lower switching losses in bridge and inverter topologies.
Further process and gate design optimizations reduce key figures of merit, including RDS(on)×Qg by about 36% and RDS(on)×Qgd by roughly 52% versus earlier DTMOSIV-H devices. These improvements contribute to lower conduction, switching, and gate drive losses, supporting higher overall system efficiency.
From a market perspective, this launch reinforces Toshiba’s positioning in the silicon super-junction MOSFET segment, which remains highly relevant in cost-sensitive industrial and energy applications despite increasing adoption of SiC and GaN. Enhanced diode performance is particularly critical in hard-switching topologies common in server power supplies and renewable energy systems.
Toshiba also supports adoption with simulation tools, including G0 and high-accuracy G2 SPICE models, as well as an online circuit simulator, helping engineers accelerate design cycles and optimize power conversion performance.
Original – Toshiba