Alpha and Omega Semiconductor announced the release of the AONC40202 (25 V) and AONC68816 (80 V) MOSFETs, designed to support high power density intermediate bus converter (IBC) DC-DC applications in AI servers and data centers.
Both devices are housed in advanced DFN 3.3 × 3.3 mm double-sided cooling, source-down packages, enabling superior thermal performance to meet the stringent requirements of AI infrastructure. The design incorporates an optimized top-clip structure for the exposed drain, allowing efficient heat removal through both the top and bottom of the package. This double-sided cooling approach significantly reduces thermal resistance and improves heat dissipation compared to conventional single-sided cooling solutions.
The MOSFETs achieve a maximum top-side thermal resistance of 0.9 °C/W, supporting improved thermal management and higher system efficiency. The AONC40202 delivers a continuous drain current of up to 405 A and supports operation up to a junction temperature of 175 °C, enabling high current handling and increased power density in compact designs.
In addition, the source-down configuration provides a larger source contact area to the PCB, improving electrical and thermal performance, while the center-gate pin layout simplifies PCB routing and minimizes gate driver connection complexity.
Both devices are built using AOS’ AlphaSGT silicon technology, combining enhanced electrical performance with improved manufacturability and reliability for high-performance computing applications.
Original – Alpha and Omega Semiconductor