SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry