Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.

The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.

The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.

Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.

The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.

The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.

Original – Navitas Semiconductor