Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.

β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.

Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.

Key Product Features

  • EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
  • Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
  • Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.

To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.

Strategic Timeline:

  • 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
  • 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
  • 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates

Original – Novel Crystal Technology