Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.

The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.

Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.

Key features include:

  • Advanced 650 V and 100 V GaNFast FETs
  • Three-level half-bridge architecture with synchronous rectification
  • 98.5% peak efficiency
  • 2.1 kW/in³ power density
  • Support for both 800 V and ±400 VDC AI data center architectures

In addition, Navitas will showcase:

  • A 12 kW AI data center power supply using IntelliWeave™ digital control
  • An 8.5 kW OCP power supply
  • A 4.5 kW CRPS power supply

For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.

The lineup includes:

  • 3300 V ultra-high-voltage (UHV) SiC modules
  • 2300 V UHV SiC modules
  • 1200 V high-voltage solutions

A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.

Navitas will debut ultra-compact:

  • 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
  • 400 W to 1 kW GaN motor control systems for industrial applications

These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.

Navitas executives and engineers will participate in multiple technical sessions:

  • March 24 | 8:55–9:20 AM CT | IS01.2
    Maximizing MVHV SiC Performance and Reliability
    Presenter: Sumit Jadav
  • March 25 | 11:05–11:30 AM CT | IS07.6
    High-Power GaN ICs in 800V AI DC-DC Brick Solutions
    Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit
  • March 26 | 11:35–11:50 AM CT | IS27.4
    Single-stage Power Converter Enabled by GaN Bidirectional Switches
    Presenter: Llew Vaughan-Edmunds

With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.

Original – Navitas Semiconductor