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Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
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Toshiba Electronic Devices & Storage Corporation has introduced the 6500V/2000A press pack IEGT “ST2000JXH35A,” featuring newly developed trench-type IEGT chips designed for high-voltage converter applications such as DC power transmission systems, industrial motor drives, and STATCOM installations.
As renewable energy sources including wind, solar, and hydro power continue expanding to combat global warming, power generation sites are increasingly located far from major consumption areas. This trend is driving demand for long-distance transmission solutions.
High-voltage direct current (HVDC) systems are gaining traction due to their:
- Lower transmission losses over long distances
- Improved controllability compared to AC systems
- Enhanced ability to manage renewable output fluctuations
The ST2000JXH35A is designed to support these evolving grid requirements.
The newly developed trench-type IEGT chips feature an optimized cell structure that delivers:
- High turn-off capability
- High short-circuit withstand capability
The device has successfully passed both turn-off and short-circuit testing at a test voltage of 4500V, validating its suitability for demanding high-voltage environments.
By adopting the 6500V-rated ST2000JXH35A, system designers can reduce the number of series-connected devices in DC transmission systems by approximately 33% compared to 4500V-rated configurations.
This reduction enables:
- Lower system weight
- Smaller overall equipment footprint
- Reduced construction and transportation costs
These advantages are particularly significant for offshore converter stations, where logistics and structural costs are high.
Beyond DC power transmission, the ST2000JXH35A supports higher voltage and more compact designs in:
- Industrial motor-drive equipment
- STATCOM (Static Synchronous Compensator) systems
Toshiba stated it will continue developing press pack IEGTs for high-voltage converters and plans to further expand its product lineup to address the growing needs of energy infrastructure and industrial power systems.
Original – Toshiba
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Veeco Instruments Inc. reported financial results for the fourth quarter and fiscal year ended December 31, 2025, with management highlighting accelerated bookings in the second half of the year and positioning for growth in 2026 driven by AI and high-performance computing (HPC).
Fourth Quarter 2025 Highlights
- Revenue: $165.0 million, compared with $182.1 million in Q4 2024
- GAAP Net Income: $1.1 million, or $0.02 per diluted share, compared with $15.0 million, or $0.26 per diluted share, in Q4 2024
- Non-GAAP Net Income: $14.7 million, or $0.24 per diluted share, compared with $24.2 million, or $0.41 per diluted share, in Q4 2024
Fiscal Year 2025 Highlights
- Revenue: $664.3 million, compared with $717.3 million in fiscal 2024
- GAAP Net Income: $35.4 million, or $0.59 per diluted share, compared with $73.7 million, or $1.23 per diluted share, in 2024
- Non-GAAP Net Income: $80.2 million, or $1.33 per diluted share, compared with $104.3 million, or $1.74 per diluted share, in 2024
On a non-GAAP basis, fourth-quarter operating income was $13.8 million, compared with $27.4 million in the prior-year period. For the full year, non-GAAP operating income was $84.3 million versus $116.1 million in 2024.
CEO Bill Miller said Veeco “executed well in 2025,” noting accelerated bookings in the second half across semiconductor, compound semiconductor and data storage markets. He said expanding backlog, increasing adoption of new technologies and the planned merger with Axcelis position the company for robust growth in 2026.
For the first quarter of 2026, Veeco expects:
- Revenue in the range of $150 million to $170 million
- GAAP diluted EPS between ($0.03) and $0.07
- Non-GAAP diluted EPS between $0.14 and $0.24
For full-year 2026, Veeco expects:
- Revenue between $740 million and $800 million
- GAAP diluted EPS between $0.83 and $1.17
- Non-GAAP diluted EPS between $1.50 and $1.85
The company said it believes continued momentum in AI and HPC markets, combined with strategic initiatives including the planned merger with Axcelis, will support long-term growth and value creation.
Original – Veeco Instruments
