Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.

By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.

Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.

The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.

The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.

For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.

Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.

Original – Infineon Technologies