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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) will present its latest Generation 7 (Gen 7) GaN technology and integrated GaN ICs at the Applied Power Electronics Conference (APEC) 2026. At booth #1935, EPC will demonstrate production-ready power architectures targeting AI infrastructure and next-generation robotic systems, alongside a series of live technical presentations led by its engineering team.
EPC said the rapid expansion of AI computing is reshaping power delivery architectures, introducing 800 V distribution and megawatt-class racks that require higher efficiency, density and reliability throughout the power conversion chain. At the same time, humanoid robotics demand compact, lightweight and highly efficient electronics embedded directly within joints and actuators. The company will show how GaN technology enables point-of-load conversion in data centers and compact motor drives in robotics.
EPC will showcase multiple development platforms already deployed in customer programs across robotics, drones and high-performance computing. These include:
- EPC9176 and EPC91104 motor drive boards
- EPC9186 multi-device inverter
- Humanoid joint platforms EPC91118 and EPC91120
- DC-DC conversion solutions including EPC91200, EPC9196 and EPC9193 series
The company emphasized that while reference designs support development, its focus remains on scalable, production-ready devices built on the Gen 7 platform.
CEO Alex Lidow said the new Generation 7 transistors outperform MOSFETs across the 40 V to 15 V range and that EPC’s latest GaN ICs enable more compact, higher-performance motor drives for humanoid robots and drones.
At APEC 2026, EPC will host live booth presentations and technical sessions covering system architectures, reliability methodologies and application implementations. Highlights include:
- Tuesday, March 24 (10:30–11:10 am):
Alex Lidow – GaN Beats MOSFETs at All Voltages
Shengke Zhang – Leveraging Test-to-Fail Methodology to Ensure Reliable Field Operation of GaN Devices - Tuesday, March 24 (2:30–3:10 pm):
Marco Palma – GaN Inverters Reference Designs for Humanoid Robot Motor Joints
Michael de Rooij – 800 V to 12 V AI Servers Using Low-Voltage GaN in an ISOP Converter
Additional conference presentations will address topics including end-to-end GaN system design, reliability assessment under dynamic switching conditions, integrated magnetics for server power supplies, robotic micro-modules and mission-profile-driven reliability for AI data centers.
EPC representatives, including CEO Dr. Alex Lidow, will be available at booth #1935 to discuss GaN solutions for AI infrastructure, robotics and high-density power systems.
Original – Efficient Power Conversion
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
