The power electronics market is shifting rapidly as Gallium Nitride (GaN) gains wider adoption, and Infineon Technologies has released the 2026 edition of its annual GaN Insights report, outlining the state of GaN technology, emerging applications and the company’s latest product direction.

“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. He added that Infineon’s product-to-system approach, manufacturing expertise and broad portfolio are intended to help customers navigate GaN adoption and capture its full potential.

Infineon points to strong market expansion expectations through 2030, driven by higher production volumes and broader penetration into new end markets. The company also expects 2026 to bring a wider set of design opportunities, including expanded use of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon highlighted its high-voltage bidirectional GaN switch architecture based on a common-drain design with a double-gate structure using Gate Injection Transistor (GIT) technology, aimed at reducing die size versus conventional back-to-back approaches. In example system comparisons, Infineon notes that CoolGaN™ BDS operation up to 1 MHz can enable higher power output and lower system costs in solar microinverters.

The report also emphasizes GaN’s expansion into AI data centers, robotics, electric vehicles, renewable energy, and newer areas such as digital health and quantum computing. In data center power, Infineon describes GaN-enabled topologies as a path to higher efficiency and power density, supporting more compact architectures and lower losses. In robotics, the company highlights the potential for smaller motor drives with improved fine motion control.

Infineon positions its Integrated Device Manufacturing (IDM) strategy and 300-mm GaN manufacturing as key differentiators, alongside a portfolio spanning 40 V to 700 V across discrete and integrated solutions. The company cites recent platform examples including CoolGaN™ Transistor 650 V G5 devices, CoolGaN™ Transistor MV G5 parts with a monolithically integrated Schottky diode, and CoolGaN™ Automotive 100 V products aligned with AEC-Q101 requirements for the shift from 12 V to 48 V vehicle architectures.

Original – Infineon Technologies