Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion