-
Toshiba Corporation announced its selection to the Clarivate Top 100 Global Innovators 2026, marking 15 straight years on the list since its inception in 2012. The annual benchmark from Clarivate identifies organizations that sustain a competitive edge and demonstrate outstanding innovation performance, based on a proprietary methodology analyzing worldwide patent data.
“We are truly honored to be recognized as a Clarivate Top 100 Global Innovator for the 15th year in a row,” said Iwao Tsuji, Corporate Officer and Corporate Vice President of Toshiba Corporation. “Leveraging the strengths of our Energy, Digital Infrastructure, and Devices & Technology businesses—particularly our advanced physical technologies—together with digital technologies such as AI, we will continue to address the rapid changes in society and contribute to solving social challenges.”
Toshiba noted that the Standards of Conduct for Toshiba Group guide employees’ daily activities and define core IP policies: comply with applicable IP laws, protect and actively use Toshiba’s intellectual property, and respect third-party IP. Looking ahead, Toshiba plans to further strengthen its IP capabilities and deploy support strategies to help its technologies and products deliver solutions while maximizing corporate value.
Original – Toshiba
-
Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion
