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Vishay Intertechnology, Inc. unveiled four 100 V Gen 2 Trench MOS Barrier Schottky (TMBS®) rectifier modules in a fully insulated SOT-227 footprint, optimized for industrial power conversion. The new devices deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and boost system efficiency, and can serve as drop-in replacements for competing SOT-227 solutions.
Engineered for high-frequency converters and power supplies in welding and industrial SMPS, 48 V battery-powered light vehicles, telecom equipment, and as blocking diodes for large battery systems, the modules combine ultra-low forward voltage with negligible Qrr and operation up to +150 °C.
Product lineup:
- VS-QA100FA10 — dual-diode, parallel configuration, 100 A per module, 100 V VRRM, 0.83 V VFM
- VS-QA150BA10 — single-phase bridge, 150 A, 100 V VRRM, 0.87 V VFM
- VS-QA200FA10 — dual-diode, parallel configuration, 200 A per module, 100 V VRRM, 0.83 V VFM
- VS-QA400FA10 — dual-diode, parallel configuration, 400 A per module, 100 V VRRM, 0.87 V VFM
Key benefits:
- Industry-standard SOT-227 package for easy drop-in efficiency upgrades
- Ultra-low forward voltage (down to 0.83 V) to reduce conduction losses
- Negligible reverse recovery charge (Qrr) for high-frequency operation
- High-temperature capability to +150 °C for demanding environments
- RoHS-compliant and UL-approved (file E78996)
Original – Vishay Intertechnology
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STMicroelectronics has been named to Clarivate’s Top 100 Global Innovators 2026—its second consecutive year and eighth time overall receiving the distinction. The annual benchmark recognizes organizations that consistently deliver high-impact inventions, setting the pace for invention quality, originality, and global reach.
“We are honored to be recognized as a Top 100 Innovator by Clarivate for 2026, marking our fifth consecutive year and eighth time overall receiving this distinction. This achievement underscores STMicroelectronics’ unwavering commitment to sustained, large-scale innovation in products and technologies, driven by the creativity and dedication of our global teams,” said Alessandro Cremonesi, Executive Vice President, Chief Innovation Officer, and General Manager, System Research and Applications. “As the pace of technological change accelerates, we work in open collaboration with customers and partners to develop disruptive semiconductor technologies and solutions in sensing, power and energy, connectivity, data communications, compute and edge AI, helping them turn ambitious ideas into market-defining solutions.”
ST invests significantly in R&D, with about 20% of employees dedicated to product design, development, and technology, in close collaboration with leading research labs and corporate partners worldwide. The company’s Innovation Office connects emerging market trends with internal technology expertise to identify opportunities and lead in new and existing domains. ST is recognized for leadership in smart power technologies, wide bandgap semiconductors, edge AI solutions, MEMS sensors and actuators, optical sensing, digital and mixed-signal technologies, and silicon photonics.
“Recognition as a Top 100 Global Innovator is a remarkable achievement given the pace of change. Multi-year winners and new entrants are investing in AI innovation as it redefines the boundaries between research, engineering and commercial execution,” said Maroun S. Mourad, President, Intellectual Property, Clarivate. “The leaders we celebrate today are not just responding to this shift, they are designing for it.”
The Top 100 Global Innovators analysis is underpinned by the Clarivate Center for IP and Innovation Research, leveraging the proprietary Derwent Strength Index—derived from the Derwent World Patents Index—to assess the influence, success, rarity, and investment behind inventions.
Original – STMicroelectronics
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Magnachip Semiconductor Corporation announced a new series of Insulated Gate Bipolar Transistors (IGBTs) for solar inverters and industrial Energy Storage Systems (ESS), reinforcing its position in high-efficiency power semiconductors.
The new generation 650 V and 1200 V discrete IGBTs are engineered for inverter and ESS platforms, delivering higher current capacity via a significantly reduced cell pitch versus the prior generation. An improved Reverse Bias Safe Operating Area (RBSOA) enhances stability under harsh high-voltage and high-current conditions. Devices are offered in standard TO-247 and high-capacity TO-247 Plus packages to give designers flexibility across a wide range of power levels.
Magnachip already supplies IGBTs to major solar inverter OEMs and is expanding its portfolio to span residential through industrial systems up to 150 kW, enabling customers to align device selection with operating environments.
The new IGBTs leverage Advanced Field Stop Trench technology and refined process design. A ~40% reduction in cell pitch significantly increases current capacity within the same die area, while RBSOA is enhanced by more than 30% for robust operation across demanding conditions.
Roadmap updates include a high-current series up to 650 V/150 A and new 750 V products in the first half of 2026. Magnachip also plans a TO-247-4Lead option with a Kelvin source pin to improve switching efficiency—broadening design choices for higher-capacity, higher-efficiency solar and ESS systems.
“This new generation IGBT series enhances efficiency and reliability through refined process technologies,” said Hyuk Woo, CTO of Magnachip. “Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs.”
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) introduced the MIW30N65AT2Y and MIW40N65AT2Y, a new generation of 650 V Trench and Field Stop (TFS) IGBTs engineered to tackle efficiency, thermal, and reliability challenges in high-power conversion. Housed in the industry-standard TO-247AB package, these Gen2 discrete devices pair low switching loss with strong current handling to support compact, high-density power architectures.
Industrial systems often face performance limits from switching losses and thermal constraints. The MIW series leverages advanced trench low-loss technology to cut both switching and conduction losses while sustaining high-power operation. A maximum junction temperature of 175 °C, high ruggedness, and strong short-circuit capability help ensure stable performance under demanding electrical and thermal conditions.
Available in 30 A and 40 A ratings, the MIW30N65AT2Y and MIW40N65AT2Y give engineers flexible options for scalable designs. A positive temperature coefficient supports safe paralleling, making the series a practical choice for efficient, reliable, and robust industrial and power-supply applications.
Features & benefits:
- 650 V rating for high-voltage industrial power conversion
- Trench low-loss technology to reduce switching loss and raise efficiency
- High ruggedness with stable operation across wide temperature ranges
- Short-circuit capability up to 5 µs
- Tj(max) of 175 °C for demanding applications
- TO-247AB package (approx. 15.9 mm × 20.8 mm) for strong thermal dissipation and high power handling
- Positive temperature coefficient (VCE rises with temperature) enabling natural current sharing and easier parallel operation
Original – Micro Commercial Components
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STMicroelectronics has been named a Global Top Employer for 2026 by Top Employers Institute, marking the company’s second consecutive year receiving the certification.
This year, STMicroelectronics is one of only 17 organizations worldwide to earn Global Top Employer status. The recognition covers ST entities in 41 countries and reflects performance across Top Employers Institute’s HR Best Practices Survey, which assesses six domains: People Strategy, Work Environment, Talent Acquisition, Learning, Diversity, Equity & Inclusion, and Wellbeing, followed by rigorous validation and audit at both corporate and country levels.
“Top Employer is an annual certification, and its global renewal for the second consecutive year underscores ST’s commitment to best-in-class people practices. In a period marked by significant external challenges, the improved scores recognized by this certification highlight the strength of our HR strategy and our determination to offer an attractive and engaging work environment worldwide,” said Rajita D’Souza, President, Human Resources and Corporate Social Responsibility, STMicroelectronics.
“Achieving Global Top Employer status in 2026 is an extraordinary accomplishment that reflects excellence in individual countries and, crucially, sustained people practices across regions and worldwide,” said Adrian Seligman, CEO, Top Employers Institute. “STMicroelectronics has demonstrated a rare ability to align its people strategy globally while ensuring meaningful, locally relevant experiences for employees in every certified market—this achievement places STMicroelectronics among a select group of employers setting the benchmark for people strategy internationally.”
The global certification is the highest level of recognition offered by Top Employers Institute. Certified organizations gain access to globally benchmarked insights, data-driven recommendations, expert validation, and proven best practices that strengthen people strategy. Benefits include enhanced employer branding, clearer strategic focus, improved decision making, and stronger ability to demonstrate impact to leaders, boards, and talent markets, as well as opportunities to connect with a global community of certified Top Employers.
Original – STMicroelectronics
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GlobalFoundries (GF) announced the appointment of Ganesh Moorthy, former president and CEO of Microchip Technology Inc., to its board of directors.
Moorthy brings more than four decades of semiconductor experience, including transformative leadership at Microchip Technology, where he served as CEO, president and board member until his retirement in November 2024. He previously held senior roles including COO and executive vice president, and earlier spent 19 years at Intel in engineering and executive positions across manufacturing, product innovation and customer-focused execution.
“Ganesh’s deep understanding of semiconductor technology, manufacturing at scale and corporate growth will be a tremendous asset to GF as we continue to execute our strategy and expand our leadership in essential semiconductor technologies,” said Dr. Thomas Caulfield, Executive Chairman of GlobalFoundries. “His leadership experience will help us accelerate innovation and strengthen GF’s role as a trusted partner delivering essential technologies that bring intelligence into the real world.”
“GlobalFoundries is uniquely positioned to bring intelligence to everyday devices through differentiated, power-efficient semiconductors manufactured at scale,” said Ganesh Moorthy. “I’m excited to work with Tom, Tim and the Board to advance GF’s strategy, deepen customer partnerships and accelerate delivery of the technologies customers need to turn innovation into real-world impact.”
Moorthy currently serves as Chair of the Board of Ralliant and sits on the boards of Celanese, SiTime and Ayar Labs. He previously served for more than a decade on the board of Rogers. His appointment supports GF’s long-term growth strategy and commitment to a resilient manufacturing footprint delivering power-efficient, differentiated technologies to customers worldwide.
Original – GlobalFoundries
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Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.
Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.
Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.
Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.
The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
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Novel Crystal Technology, Inc., working under NEDO’s “Key and Advanced Technology R&D through Cross Community Collaboration Program” for β-Ga2O3 wafers, power devices and modules, announced a new crystal growth method that eliminates precious-metal crucibles. The Drop-fed Growth (DG) process supplies raw-material melt as droplets, sharply reducing the use of iridium compared with the conventional Edge-defined Film-fed Growth (EFG) method and enabling β-Ga2O3 substrate manufacturing costs to fall to approximately one-tenth of current levels.
The company has demonstrated 95-mm-diameter β-Ga2O3 crystals grown without iridium crucibles. Using induction heating to raise the temperature inside the chamber, the crystal surface (seed crystal) is heated and locally melted by radiation through a shaped aperture that stabilizes the temperature profile and supports scale-up to larger diameters. Continuous droplet feeding of the melt onto the crystal surface, combined with downward pulling, enables steady growth without a precious-metal container.
Key benefits of the DG method include:
- Dramatic reduction in iridium usage by eliminating precious-metal crucibles
- Easier scale-up to large diameters via controlled surface heating and melting
- Continuous feed enabling production of long crystal boules
A 95-mm cylindrical crystal with a 50-mm grown section has been produced; n-type doping was introduced, as indicated by the crystal’s dark-blue coloration. Patent protection for the DG method is in place or underway in multiple jurisdictions, including Japan (Patent No. 7633637; application 2025-061932), the United States (US 11,725,299 B2; US 12,163,246 B2), Europe (EP 3 945 147 A1), and China (CN 114000188 A).
Looking ahead, Novel Crystal Technology plans to increase crystal diameter and quality using DG, targeting shipments of 150-mm (6-inch) β-Ga2O3 substrates in 2029 and 200-mm (8-inch) substrates in 2035. The company expects the method’s cost and scalability advantages to accelerate adoption of β-Ga2O3 for low-loss power devices across medium-voltage applications such as home appliances and EVs, and high-voltage systems including rail and grid infrastructure.
Original – Novel Crystal Technology
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Efficient Power Conversion (EPC) announced that the EPC2366, a 40 V enhancement-mode GaN (eGaN®) power transistor, has received the EPDT 2025 Product of the Year Award in the Power Transistor category. The recognition highlights EPC’s leadership in GaN technology for high-efficiency, high-power-density systems spanning data centers, robotics and AI infrastructure.
The EPC2366 targets fast-switching, low-loss applications and is positioned as a superior alternative to legacy MOSFETs in 12 VOUT synchronous rectifiers. It features an ultra-low RDS(on) of 0.8 mΩ and a gate-charge-based figure of merit (RDS(on) × QG) < 12 mΩ·nC, enabling simultaneous reductions in conduction and switching losses for high-frequency power conversion.
The device supports 40 V drain-to-source operation (48 V transient), continuous drain current up to 88 A at VGS = 5 V, and ~360 A pulsed. As an enhancement-mode GaN device, it offers easy gate drive while delivering GaN advantages such as zero reverse-recovery charge and very low output capacitance, which reduce deadtime losses and boost half-bridge and synchronous rectifier efficiency.
Thermal performance is optimized via a compact 3.3 × 2.6 mm PQFN with backside thermal pad. Typical thermal metrics include RθJC ≈ 0.6 °C/W and RθJB ≈ 1.8 °C/W; junction-to-ambient ranges from ~54 °C/W on a JEDEC board to ~26 °C/W on EPC’s recommended evaluation layout. With proper PCB copper spreading and layout, the device supports reliable operation up to a 150 °C maximum junction temperature.
To accelerate design-in, EPC offers the EPC90167 half-bridge evaluation board featuring two EPC2366 devices in a low-parasitic layout. The platform supports 7.5–12 V gate drive, standard PWM logic levels, and single- or dual-input PWM modes (with managed deadtime), providing a practical reference for DC-DC converters, motor drives and other high-current, high-speed stages. Clearly marked test points and recommended bring-up procedures help engineers evaluate switching behavior, thermals and system performance quickly.
“The EPC2366 showcases our ongoing commitment to help engineers design smaller, faster, and more efficient systems that meet the power demands of tomorrow,” said Alex Lidow, CEO and co-founder of EPC. EPDT Editor Mike Green added, “The differentiation achieved with this device, in terms of FoM and power density, will be of clear value to next-generation power system design.”
Optimized for secondary-side synchronous rectification in 48 V–12 V LLC converters, the EPC2366’s leading FoM enables higher switching frequencies and improved efficiency, making it a strong fit for high-density power supplies in AI data centers and other performance-driven applications.
Original – Efficient Power Conversion
