Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.

Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.

The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.

Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).

Device highlights:

  • VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
  • VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
  • VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
  • VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
  • VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227

Samples and production quantities are available now with 13-week lead times.

Original – Vishay Intertechnology