Vanguard International Semiconductor Corporation (VIS) signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) covering high-voltage (650 V) and low-voltage (80 V) Gallium Nitride (GaN) processes. The agreement accelerates VIS’s roadmap for next-generation GaN power solutions serving data centers, automotive electronics, industrial control, and energy management—markets that demand high-efficiency power conversion and higher power density.
Under the pact, VIS will broaden its GaN-on-Si offering into high-voltage applications and establish a comprehensive GaN-on-Si platform alongside its existing GaN-on-QST platform, becoming the only foundry able to provide power GaN on both silicon and QST substrates. VIS plans to support a complete product span—low voltage (<200 V), high voltage (650 V), and ultra-high voltage (1200 V)—strengthening its position across critical power segments.
As silicon approaches performance limits in many power designs, GaN’s efficiency, power density, and compact footprint are enabling new architectures. VIS is building a portfolio from 15 V to 1200 V and will integrate the licensed technology with its current platforms. Process validation will run on VIS’s mature 8-inch line to ensure stability and yield, with development starting in early 2026 and production targeted for the first half of 2028.
“This technology licensing agreement not only underscores the engagement and ongoing collaborative efforts between VIS and TSMC, but also represents our continued commitment to advancing a comprehensive power GaN product portfolio and strengthening our strategic position in compound semiconductors,” said Dr. John Wei, President of VIS. “Through this collaboration, we will accelerate our support for customers in high-performance power conversion applications, enabling the semiconductor power technology to move into the next generation and helping realize a future of green energy and intelligent technologies.”
Original – Vanguard International Semiconductor