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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
Original – Vishay Intertechnology
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The Semiconductor Industry Association (SIA) announced that John Neuffer will retire in mid-2026 after 11 years as president and CEO. SIA represents 99% of the U.S. semiconductor industry by revenue and nearly two-thirds of non-U.S. chip firms.
“John has been an outstanding leader for the semiconductor industry at a time when U.S. technology leadership truly matters,” said Dr. Lisa Su, AMD chair and CEO and 2026 SIA board chair. “He helped strengthen the policy foundation that enables innovation, global competitiveness, and growth across our ecosystem. Because of his leadership, SIA is better positioned to support America’s economy, national security, and long-term technology leadership.”
Under Neuffer’s tenure, SIA secured major policy wins, including enactment and expansion of U.S. semiconductor manufacturing incentives that have catalyzed more than $600 billion in private investment and set the U.S. on track to more than triple domestic chip manufacturing capacity by 2032. The association also helped deliver billions in federal R&D funding to advance American chip innovation and bolster economic and national security.
SIA’s advocacy further supported critical trade outcomes, including the expansion of the Information Technology Agreement and a global agreement to prevent tariffs on cross-border data transfers, enhancing industry competitiveness. Neuffer also guided the organization through global chip shortages and pandemic-related production disruptions.
“It has been a genuine pleasure and an indelible point of pride for me to work alongside so many great leaders in this incredible industry and to play a part in advancing U.S. semiconductor leadership,” said Neuffer. “The challenges we face are dwarfed by the opportunities ahead, and I can’t wait to see what’s next. I will miss very much the high-performing team at SIA.”
To ensure a smooth transition, Neuffer will retire following the anticipated midyear appointment of his successor. SIA has retained Korn Ferry to conduct a comprehensive search.
Original – Semiconductor Industry Association
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Vanguard International Semiconductor Corporation (VIS) signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) covering high-voltage (650 V) and low-voltage (80 V) Gallium Nitride (GaN) processes. The agreement accelerates VIS’s roadmap for next-generation GaN power solutions serving data centers, automotive electronics, industrial control, and energy management—markets that demand high-efficiency power conversion and higher power density.
Under the pact, VIS will broaden its GaN-on-Si offering into high-voltage applications and establish a comprehensive GaN-on-Si platform alongside its existing GaN-on-QST platform, becoming the only foundry able to provide power GaN on both silicon and QST substrates. VIS plans to support a complete product span—low voltage (<200 V), high voltage (650 V), and ultra-high voltage (1200 V)—strengthening its position across critical power segments.
As silicon approaches performance limits in many power designs, GaN’s efficiency, power density, and compact footprint are enabling new architectures. VIS is building a portfolio from 15 V to 1200 V and will integrate the licensed technology with its current platforms. Process validation will run on VIS’s mature 8-inch line to ensure stability and yield, with development starting in early 2026 and production targeted for the first half of 2028.
“This technology licensing agreement not only underscores the engagement and ongoing collaborative efforts between VIS and TSMC, but also represents our continued commitment to advancing a comprehensive power GaN product portfolio and strengthening our strategic position in compound semiconductors,” said Dr. John Wei, President of VIS. “Through this collaboration, we will accelerate our support for customers in high-performance power conversion applications, enabling the semiconductor power technology to move into the next generation and helping realize a future of green energy and intelligent technologies.”
Original – Vanguard International Semiconductor
