-
Cambridge GaN Devices appointed Fabio Necco as Chief Executive Officer. The move is intended to accelerate CGD’s expansion into priority markets.
Necco succeeds CGD Co-founder Giorgia Longobardi, who transitions to Chief Marketing Officer while remaining a Director on CGD’s Board and serving on the Advisory Board of the International Semiconductor Industry Group (I.S.I.G.). “I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market,” said Longobardi. “Fabio is the right person with the right skill set to take CGD into its next growth phase.”
Necco joins CGD from onsemi, where he served as vice president and division general manager. He brings more than 25 years of experience across power electronics, applications engineering, vehicle electrification and data centers—areas central to CGD’s strategy. “CGD is at an exciting juncture,” said Necco. “I’m impressed with the company’s progress and am eager to lead the team into the next stages of product development while substantially increasing our presence in key markets.”
CGD develops GaN devices that enable designers to build sustainable, high-efficiency power systems. Its ICeGaN® technology uses a monolithic, single-chip architecture that integrates all necessary components on one die, improving efficiency and performance while simplifying design. The portfolio emphasizes compact, engineer-led devices suited to market-specific requirements such as traction/auxiliary inverters for electric vehicles and industrial power conversion. A focus on bare die, ease of use, robust gate design and parallel operation supports a broad range of power applications.
Original – Cambridge GaN Devices
-
Micro Commercial Components (MCC) introduced a new automotive-qualified Schottky Barrier Rectifier (SBR) series that adds high-performance options in compact DPAK and D2PAK packages. Engineered for demanding vehicle power architectures, the devices combine low forward voltage, high current capability and stable high-temperature operation to help designers boost efficiency and reliability in automotive power systems.
The series spans 10 A to 60 A with voltage ratings from 45 V to 100 V, enabling broad use across power conversion and protection functions in conventional and electrified platforms. AEC-Q101 qualification, low power loss and a maximum junction temperature of 175 °C support dependable, long-term operation under harsh conditions—reducing thermal stress, improving system efficiency and simplifying design-in for automotive and EV applications.
Features & benefits:
- AEC-Q101 qualified for automotive reliability
- High current capability for demanding power stages
- Low forward voltage to minimize conduction losses
- Maximum junction temperature of 175 °C for high-temperature operation
- Compact DPAK package (approx. 6.5 mm × 6.1 mm)
- High-thermal-performance D2PAK package (approx. 10.4 mm × 9.2 mm)
Original – Micro Commercial Components
