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EPC announced the appointment of Maurizio Di Paolo Emilio as Director of Global Marketing Communications. Maurizio brings a deep background in the power semiconductor sector with expertise in Wide Band Gap (WBG) technologies.
Throughout his career, Maurizio has evaluated advanced semiconductor products from early concept through production release. He has published extensively on power electronics and authored and edited several books on the subject. His technical insight, market knowledge, and focus on innovation make him a strong addition to EPC’s leadership team.
As Director of Global MARCOM, Maurizio will expand EPC’s communications reach and strengthen engagement with customers and markets adopting GaN technology. EPC’s latest generation of GaN devices delivers performance gains over MOSFETs, competitor GaN devices, and earlier EPC generations. Maurizio’s combination of technical depth and strategic messaging will help clearly convey the advantages of these newest GaN products.
“Please join EPC in welcoming Maurizio as EPC’s newest team member,” said Alex Lidow.
“I’m honored to be the Global Director of Marketing Communications at EPC,” said Maurizio Di Paolo Emilio. “In this role, I’ll work directly with the team to develop and manage content that shows how GaN can change the game through EPC’s solutions—driving improvements in performance, efficiency, and scalability. As GaN—already faster, smaller, and more powerful than silicon—continues to advance, we will keep pushing the limits of power electronics for AI data centers, robotics, and other cutting-edge industries. I’m especially inspired by Alex Lidow’s visionary leadership, which continues to guide EPC’s innovation and success.”
Original – Efficient Power Conversion
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Rutronik Elektronische Bauelemente GmbH and ROHM Semiconductor are marking 30 years of partnership, highlighting a long-standing alliance that has helped shape Europe’s electronics distribution landscape.
Founded in 1973 and owner-managed in Ispringen, Germany, Rutronik has grown into one of Europe’s leading component distributors with a strong presence across Europe and Asia. The company provides an extensive sales footprint for ROHM and holds platinum partner status. ROHM ranks as the second-largest supplier within Rutronik’s power devices business.
Over three decades, the companies have built a relationship grounded in trust and common objectives. Rutronik’s comprehensive promotion of ROHM’s portfolio—including LSI products, wide bandgap technologies, and advanced power solutions—has supported ROHM’s expansion in key markets such as automotive and industrial.
“ROHM is a strategic partner for us,” said Thomas Rudel, CEO at Rutronik. “Our collaboration has been instrumental in delivering cutting-edge solutions to our customers. We see tremendous potential in expanding our joint business, especially in high-growth areas such as WBG and power electronics.”
ROHM signaled its intent to further deepen the relationship, citing Rutronik’s technical expertise, market reach, and proactive sales approach. “Rutronik’s dedication to our products and their deep understanding of the market have made them an invaluable partner,” said Toshimitsu Suzuki, Group General Manager, International Sales at ROHM. “We look forward to continuing our journey together and exploring new opportunities for growth.”
“In the European electronics distribution landscape, Rutronik’s significance is unparalleled,” added Wolfram Harnack, President of ROHM Semiconductor Europe. “We are excited to continue our journey together—exploring new opportunities for growth and innovation in this dynamic region.”
As they celebrate this milestone, Rutronik and ROHM reaffirm their commitment to innovation, customer success, and mutual growth—setting the stage for continued expansion and collaboration.
Original – ROHM
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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
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Quobly announced a major step in building its industrial value chain, with the first custom 28Si FD-SOI wafers from Soitec now running in STMicroelectronics’ 300 mm manufacturing facilities in Crolles, France. The achievement—part of the companies’ strategic collaboration—establishes a fully integrated pathway from advanced materials to quantum integrated circuits and marks a global first for FD-SOI with a 28Si-enriched channel. It advances Quobly’s roadmap toward million-qubit technology and accelerates the industrialization of quantum processor units (QPUs).
“The industrial availability of purified isotope 28 FD-SOI wafers is a game changer for quantum technologies. It allows us to anchor our developments in a solid and proven supply chain from purified gas to quantum chip delivery—a key enabler for achieving our quantum performance targets,” said Nicolas Daval, Chief Engineering Officer of Quobly.
“We are proud to see Soitec’s advanced substrates contributing to the emergence of Europe’s quantum ecosystem. This milestone illustrates how our expertise in engineering semiconductor materials can enable the next generation of quantum technologies,” said Christophe Maleville, Chief Technology Officer, Senior Executive VP Innovation of Soitec.
Manufactured on Soitec’s industrial lines, the new 28Si FD-SOI substrates are engineered to eliminate isotopic impurities, significantly reducing quantum noise and enabling single-qubit gate fidelities approaching 99.999%—a foundation for reliable, scalable silicon-based quantum processors.
By combining the FD-SOI platform—a low-noise, CMOS-compatible architecture—with a 28Si-enriched channel, Quobly creates a scalable path to silicon-based quantum processors that benefits from mature, robust industrial semiconductor processes. The approach underpins the transition from millions of physical qubits to thousands of logical qubits, with the potential to unlock advances in materials discovery, energy optimization and biotechnological modeling.
The collaboration aligns the strengths of each partner: Soitec for industrial manufacturing of advanced substrates, STMicroelectronics for technology validation and processing in a high-volume 300 mm fab, and Quobly for quantum device development. With the first wafer lots in production at Crolles and ongoing process development leveraging STMicroelectronics’ 28 nm FD-SOI process, initial performance data from prototype devices are expected in the first quarter of 2026.
Original – Soitec
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Infineon Technologies AG has received the Global Semiconductor Association (GSA) “Outstanding EMEA Semiconductor Company Award.” Presented at GSA’s Awards Celebration, the honor recognizes organizations and individuals for vision, innovation, execution and future potential.
“It is an honor to receive the Outstanding European Semiconductor Company Award from the GSA,” said Andreas Urschitz, Chief Marketing Officer (CMO) and Member of the Management Board, Infineon Technologies. “This recognition reflects our steadfast dedication to customer-focused innovation worldwide, spanning key areas such as robotics, edge AI, powering AI, software-defined vehicles and quantum computing. We extend our sincere gratitude to the GSA and its judging committee for this prestigious award.”
Infineon’s portfolio spans power semiconductors, analog semiconductors, sensors, microcontrollers and connectivity solutions. The company recently strengthened its position as the world’s leading provider of microcontrollers for the automotive industry with the acquisition of Marvell’s Automotive Ethernet Business. It also reinforced its technology leadership in power semiconductors by shifting gallium nitride manufacturing to 300-millimeter wafers, setting new benchmarks in power electronics. In AI data centers, Infineon is a leading supplier of power solutions and recently raised revenue expectations in this segment to 1.5 billion euros.
The GSA Awards Celebration brings together more than 1,500 industry leaders annually to recognize companies that excel in vision, strategy, execution and future opportunities. Honors span categories from leadership to financial performance, reflecting overall industry respect and achievement.
Original – Infineon Technologies
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YES (Yield Engineering Systems) announced the appointment of Rezwan Lateef as Chief Executive Officer. Lateef previously served as President and has been a key driver of the company’s growth, global expansion, and product innovation in recent years.
The transition comes as the company surpasses a key revenue milestone and enters its next phase of scaling with top-tier semiconductor and AI computing customers. Rama Alapati, who has served as CEO since 2021, will move into a consulting role to support Lateef during the transition and ensure organizational continuity.
“Rama has played an instrumental role in elevating YES from a promising technology company into a recognized leader in Advanced Packaging,” said Rezwan Lateef. “His commitment and leadership have been central to our transformation. I am grateful for his partnership, and I am pleased that he will continue to support me during this transition.”
Under Lateef’s leadership, YES will focus on deepening relationships with industry leaders and advancing solutions for the rapidly growing AI and High-Performance Computing markets. Strategic priorities include accelerating new systems for next-generation packaging architectures and expanding the company’s portfolio to help customers meet escalating performance and throughput demands.
“We are very bullish and remain highly confident in the future of YES,” said Nety Krishna, Senior Managing Director, representing KCK, the company’s primary investor. “The company has invested heavily in product development and is well positioned at key customers in the rapidly expanding segment of Advanced Packaging. This leadership transition reflects our long-term commitment to supporting YES through its next stage of growth.”
“YES has an exceptional team, an expanding global footprint, and a clear technology roadmap aligned with the needs of our customers,” Lateef added. “I look forward to leading this next chapter as we continue to scale, innovate, and increase the value we deliver to the industry.”
Original – Yield Engineering Systems
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Micro Commercial Components has introduced the MCAC2D6N04Y, a 40 V N-channel MOSFET in a compact DFN5060 package, engineered for applications where efficiency, power density and board space are equally critical. With an ultra-low RDS(on) of 2.6 mΩ at VGS = 10 V and a continuous drain current rating of 166 A, the device minimizes conduction losses and heat generation, enabling more power delivery in a smaller footprint while easing thermal design. Its combination of very low on-resistance, fast and efficient switching, and small package size makes it a strong fit for battery protection circuits, compact DC-DC converters, motor drive stages and other space-constrained power systems.
Leveraging a Split Gate Trench structure optimized for low gate charge (Qg = 38.3 nC), the MCAC2D6N04Y-TP supports high-frequency operation where switching losses and EMI must be tightly controlled. A maximum junction temperature of 175 °C provides ample headroom under demanding load conditions, reducing heatsink requirements and lowering overall thermal overhead.
Features & benefits:
- 40 V N-channel power MOSFET
- Ultra-low RDS(on) of 2.6 mΩ (max) at VGS = 10 V to cut conduction losses and improve system efficiency
- Split Gate Trench technology with low gate charge (Qg = 38.3 nC) for fast, efficient switching
- High continuous drain current (ID) of 166 A for robust power handling
- Maximum junction temperature of 175 °C for enhanced ruggedness and relaxed cooling needs
- Compact DFN5060 package (5.0 mm × 6.0 mm) to save board area and support high power density layouts
- RoHS compliant and halogen-free for global environmental and regulatory alignment
Original – Micro Commercial Components
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onsemi has introduced its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, offering improved thermal performance and design flexibility for high-power, high-voltage applications. Targeting sectors such as electric vehicles (EVs), solar energy infrastructure, and energy storage systems, the new solution addresses the growing demand for efficiency and compactness in power electronics.
The newly released 650V and 950V EliteSiC MOSFETs combine onsemi’s advanced silicon carbide technology with the thermally optimized T2PAK top-cool package, providing designers with a powerful tool for tackling thermal challenges in automotive and industrial systems. Initial devices are already shipping to lead customers, with additional variants scheduled for release beginning in Q4 2025.
The EliteSiC T2PAK package enables direct thermal transfer from the MOSFET to the system heatsink, bypassing limitations of PCB-based cooling. This configuration supports superior heat dissipation and lower junction temperatures, resulting in:
- Reduced thermal resistance and improved thermal efficiency
- Lower component stress and extended system reliability
- Higher power density in smaller footprints
- Simplified thermal design for faster product development cycles
Technical Highlights of the T2PAK Top-Cool Package:
- Supports RDS(on) values ranging from 12 mΩ to 60 mΩ
- Minimizes stray inductance for improved switching speeds and reduced energy losses
- Combines thermal and switching performance advantages of TO-247 and D2PAK formats
- Offers direct die-to-heatsink contact, eliminating PCB thermal bottlenecks
This packaging innovation allows engineers to design more compact and thermally optimized systems, helping to meet the efficiency requirements of modern power applications in EV powertrains, solar inverters, industrial drives, and high-performance chargers.
With the integration of EliteSiC technology and the top-cool T2PAK format, onsemi continues to expand its capabilities in delivering advanced silicon carbide solutions for next-generation power electronics.
Original – onsemi
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X-FAB is streamlining the development of advanced silicon carbide (SiC) power devices through its latest XbloX platform. This modular, scalable platform enables SiC device designers to transition from prototyping to full-scale production significantly faster—achieving production ramp-up up to nine months ahead of traditional development methods.
The third generation of the XbloX platform (XSICM03) introduces advanced capabilities tailored for high-performance planar SiC MOSFETs. It reduces cell pitch and improves on-state resistance, which enables up to 30% more dies per wafer and supports compact, efficient power device designs. The platform is optimized for high-growth sectors such as automotive, industrial automation, energy, and datacenter infrastructure, where next-generation SiC MOSFETs are in high demand.
XbloX provides two key benefits for device developers: first, X-FAB takes ownership of core process development activities by offering a Process Installation Kit (PIK) that contains pre-qualified process modules and implant recipes. Second, the standardized and modular configuration of the platform transforms wafer manufacturing into a scalable process, moving beyond the limitations of customer-specific production models.
The result is a dramatic reduction in development time, risk, and engineering resources. Customers benefit from an accelerated onboarding process—up to six times faster than conventional methods—and a guided approach that simplifies design, mask tooling, and process selection. Once process blocks are selected, XbloX automatically generates an integrated process flow that incorporates quality controls, business systems, and commercial terms.
“Thanks to a PIK, qualified SiC process development modules, and an automated onboarding process, customers need do little more than access our global hotline for support on block selection and deployment,” said Brian Throneberry, Business Director SiC Foundry at X-FAB. “We have robust rules in place to help guide design, mask tooling, engagement, and so on. Once the selection is finalized, XbloX automatically generates the process flow, which subsequently integrates quality systems, business functions, and commercial aspects for the customer.”
The XSICM03 platform continues to build on X-FAB’s leadership in wide-bandgap semiconductor manufacturing by aligning SiC process integration with CMOS-modeled specifications, design rules, and control plans. Customers will also benefit from future advancements as new modules are added to the XbloX ecosystem.
By offering a standardized, high-performance, and highly scalable solution for SiC device manufacturing, X-FAB’s XbloX platform positions itself as a strategic enabler for fabless power semiconductor developers aiming to accelerate time to market and expand product portfolios efficiently.
Original – X-FAB
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Micro Commercial Components (MCC) has introduced the MCTT1D7N10Y, a 100V power MOSFET housed in a TO-Leaded Topside Cooling (TOLT) package, engineered to deliver exceptional thermal performance and rugged reliability. Designed for space-constrained, high-demand environments such as industrial systems and server-grade power electronics, the MCTT1D7N10Y combines high current capability with advanced thermal management.
Topside cooling is a thermal architecture that allows heat to be dissipated directly from the top of the package. Unlike conventional bottom-cooled designs that rely on the printed circuit board (PCB) for heat transfer, the TOLT package features an exposed drain pad on the top surface, enabling direct thermal contact with a heatsink, cold plate, or thermal interface material (TIM). This approach significantly shortens the thermal path, resulting in more efficient heat dissipation and enhanced device performance.
By removing the PCB from the primary thermal path, topside cooling enables lower junction temperatures, greater current handling with minimal derating, simplified PCB layouts, and extended system longevity through reduced thermal stress on adjacent components.
Key features of the MCTT1D7N10Y include:
- 100V N-channel MOSFET with maximum RDS(on) of 1.7 mΩ
- TO-Leaded Topside Cooling (TOLT) package with exposed drain for efficient heat transfer
- Direct die-to-heatsink thermal path bypassing the PCB
- Junction-to-case thermal resistance (RthJC) of 0.36 K/W
- Low-profile package suited for compact designs
- High current capability with strong thermal cycling robustness
With its combination of electrical performance and advanced packaging, the MCTT1D7N10Y offers an ideal solution for designers seeking to enhance power density, efficiency, and reliability in next-generation industrial and data-centric power applications.
Original – Micro Commercial Components
