onsemi announced a collaboration agreement with GlobalFoundries to co-develop and manufacture advanced gallium nitride (GaN) power products on GF’s state-of-the-art 200 mm eMode GaN-on-silicon process, beginning with 650 V devices. The partnership pairs GF’s process platform with onsemi’s silicon drivers, controllers and thermally enhanced packaging to enable smaller, higher-efficiency systems for AI data centers, automotive, industrial, and aerospace, defense and security applications.

The roadmap targets power supplies and DC-DC converters for AI infrastructure, onboard chargers and DC-DC converters for electric vehicles, solar microinverters and energy storage systems, as well as motor drives and other high-growth industrial and mission-critical markets. By combining device technology and package integration, the companies aim to raise power density, improve efficiency and simplify system design.

“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650 V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.

“By combining our 200 mm GaN-on-Si platform and U.S.-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace and defense, and other critical markets,” said Mike Hogan, Chief Business Officer, GlobalFoundries.

The effort expands onsemi’s intelligent power portfolio across low, medium and high-voltage lateral GaN and ultra high-voltage vertical GaN, enabling next-generation architectures that deliver more power in smaller footprints. Advantages include higher-frequency operation to reduce component count and size, bidirectional capability to unlock new topologies, and increased integration that combines GaN FETs with drivers, controllers, isolation and protection for faster design cycles and lower EMI.

Sampling is planned to begin in the first half of 2026.

Original – onsemi