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Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.
“Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”
Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.
“Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”
Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.
Original – Wolfspeed
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Micro Commercial Components introduced the MCTL011N20YH, a 200 V N-channel MOSFET designed for high-power systems where efficiency, thermal performance and board space are critical. Built on Split Gate Trench MOSFET Technology and housed in a thermally efficient TOLL-8L package, the device delivers low conduction and switching losses with low parasitic inductance—supporting fast, clean transitions and stable operation up to Tj(max) = 175 °C.
The optimized thermal path of the TOLL-8L package improves heat dissipation, enabling higher current handling with reduced temperature rise and lighter cooling requirements. This helps engineers increase power density, meet tight efficiency targets and enhance long-term reliability in motor drivers, DC-DC converters, UPS systems and server power modules.
Features and benefits:
- 200 V N-channel power MOSFET
- Split Gate Trench MOSFET Technology for low losses and high efficiency
- TOLL-8L surface-mount power package with compact footprint
- Low parasitic inductance for fast, clean switching
- Excellent thermal performance and heat dissipation
- High current handling capability
- Maximum junction temperature: Tj(max) = 175 °C
- Mechanically robust package suited for harsh and industrial environments
Original – Micro Commercial Components
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Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
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Suzhou Inovance Automotive Systems Co., Ltd. and Innoscience (Suzhou) Technology Co., Ltd. announced that their next-generation 6.6kW on-board charger system, built on 650V GaN devices, has been successfully integrated into Changan vehicles. The result is a step change in charging efficiency and power density, raising the bar for automotive power electronics.
Inovance Automotive’s two-in-one architecture combines the on-board charger and DC-DC converter in a single unit. By pairing a globally optimized efficiency design with Innoscience’s 650V high-voltage GaN devices—known for ultra-low switching loss and high-frequency performance—the system delivers measurable gains:
· 30% increase in power density, reaching 4.8 kW/L
· Over 2% improvement in overall efficiency compared with similar products
· 20% reduction in system weight, supporting industry goals for higher efficiency and lightweight designThe jointly developed 6.6kW GaN OBC solution also improves vehicle packaging by saving space and enhancing integration flexibility at the platform level. Higher conversion efficiency shortens charging time for drivers and contributes to meaningful energy savings, ultimately supporting extended driving range.
Deploying this GaN-based OBC system in Changan vehicles marks a milestone for GaN in automotive power systems—a breakthrough that strengthens both Inovance Automotive and Innoscience as they expand in the EV sector. The companies plan to continue their collaboration to accelerate the shift toward higher efficiency and greater sustainability across next-generation electric vehicles.
Original – Innoscience Technology
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GlobalFoundries announced that its Board of Directors has appointed Sam Franklin as Chief Financial Officer. Franklin previously served as Senior Vice President of Business Finance & Operations and Investor Relations and most recently as Interim CFO.
“We are delighted to have Sam formally appointed as CFO,” said Tim Breen, CEO of GF. “His proven leadership and financial expertise will accelerate GF’s momentum and capitalize on the significant opportunities ahead. As we continue to drive profitability and deliver differentiated technologies for the scaling of AI from the data center to the physical world, Sam’s ability to deliver results and partner across the organization will be critical to our success.”
Franklin brings extensive financial leadership experience and a strong record of driving operational excellence and strategic growth. Since joining GF in 2022, he has held senior roles spanning finance operations, business finance, investor relations, capital markets and treasury. His deep understanding of GF’s business and commitment to disciplined financial management position him to lead the company’s finance and operations organization as GF advances its long-term strategy.
“I am thrilled to take on this role and support the acceleration of GF’s mission to deliver essential chip technologies to our customers,” said Franklin. “As the secular drivers and demand for semiconductors continue to ramp, GF is building a strong foundation for its next phase of robust, sustainable and profitable growth. I look forward to working with our talented teams across the world to advance our strategic priorities, drive operational excellence and create long-term value for our shareholders.”
Original – GlobalFoundries
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EPC announced the appointment of Maurizio Di Paolo Emilio as Director of Global Marketing Communications. Maurizio brings a deep background in the power semiconductor sector with expertise in Wide Band Gap (WBG) technologies.
Throughout his career, Maurizio has evaluated advanced semiconductor products from early concept through production release. He has published extensively on power electronics and authored and edited several books on the subject. His technical insight, market knowledge, and focus on innovation make him a strong addition to EPC’s leadership team.
As Director of Global MARCOM, Maurizio will expand EPC’s communications reach and strengthen engagement with customers and markets adopting GaN technology. EPC’s latest generation of GaN devices delivers performance gains over MOSFETs, competitor GaN devices, and earlier EPC generations. Maurizio’s combination of technical depth and strategic messaging will help clearly convey the advantages of these newest GaN products.
“Please join EPC in welcoming Maurizio as EPC’s newest team member,” said Alex Lidow.
“I’m honored to be the Global Director of Marketing Communications at EPC,” said Maurizio Di Paolo Emilio. “In this role, I’ll work directly with the team to develop and manage content that shows how GaN can change the game through EPC’s solutions—driving improvements in performance, efficiency, and scalability. As GaN—already faster, smaller, and more powerful than silicon—continues to advance, we will keep pushing the limits of power electronics for AI data centers, robotics, and other cutting-edge industries. I’m especially inspired by Alex Lidow’s visionary leadership, which continues to guide EPC’s innovation and success.”
Original – Efficient Power Conversion
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Rutronik Elektronische Bauelemente GmbH and ROHM Semiconductor are marking 30 years of partnership, highlighting a long-standing alliance that has helped shape Europe’s electronics distribution landscape.
Founded in 1973 and owner-managed in Ispringen, Germany, Rutronik has grown into one of Europe’s leading component distributors with a strong presence across Europe and Asia. The company provides an extensive sales footprint for ROHM and holds platinum partner status. ROHM ranks as the second-largest supplier within Rutronik’s power devices business.
Over three decades, the companies have built a relationship grounded in trust and common objectives. Rutronik’s comprehensive promotion of ROHM’s portfolio—including LSI products, wide bandgap technologies, and advanced power solutions—has supported ROHM’s expansion in key markets such as automotive and industrial.
“ROHM is a strategic partner for us,” said Thomas Rudel, CEO at Rutronik. “Our collaboration has been instrumental in delivering cutting-edge solutions to our customers. We see tremendous potential in expanding our joint business, especially in high-growth areas such as WBG and power electronics.”
ROHM signaled its intent to further deepen the relationship, citing Rutronik’s technical expertise, market reach, and proactive sales approach. “Rutronik’s dedication to our products and their deep understanding of the market have made them an invaluable partner,” said Toshimitsu Suzuki, Group General Manager, International Sales at ROHM. “We look forward to continuing our journey together and exploring new opportunities for growth.”
“In the European electronics distribution landscape, Rutronik’s significance is unparalleled,” added Wolfram Harnack, President of ROHM Semiconductor Europe. “We are excited to continue our journey together—exploring new opportunities for growth and innovation in this dynamic region.”
As they celebrate this milestone, Rutronik and ROHM reaffirm their commitment to innovation, customer success, and mutual growth—setting the stage for continued expansion and collaboration.
Original – ROHM
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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
