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onsemi has introduced its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, offering improved thermal performance and design flexibility for high-power, high-voltage applications. Targeting sectors such as electric vehicles (EVs), solar energy infrastructure, and energy storage systems, the new solution addresses the growing demand for efficiency and compactness in power electronics.
The newly released 650V and 950V EliteSiC MOSFETs combine onsemi’s advanced silicon carbide technology with the thermally optimized T2PAK top-cool package, providing designers with a powerful tool for tackling thermal challenges in automotive and industrial systems. Initial devices are already shipping to lead customers, with additional variants scheduled for release beginning in Q4 2025.
The EliteSiC T2PAK package enables direct thermal transfer from the MOSFET to the system heatsink, bypassing limitations of PCB-based cooling. This configuration supports superior heat dissipation and lower junction temperatures, resulting in:
- Reduced thermal resistance and improved thermal efficiency
- Lower component stress and extended system reliability
- Higher power density in smaller footprints
- Simplified thermal design for faster product development cycles
Technical Highlights of the T2PAK Top-Cool Package:
- Supports RDS(on) values ranging from 12 mΩ to 60 mΩ
- Minimizes stray inductance for improved switching speeds and reduced energy losses
- Combines thermal and switching performance advantages of TO-247 and D2PAK formats
- Offers direct die-to-heatsink contact, eliminating PCB thermal bottlenecks
This packaging innovation allows engineers to design more compact and thermally optimized systems, helping to meet the efficiency requirements of modern power applications in EV powertrains, solar inverters, industrial drives, and high-performance chargers.
With the integration of EliteSiC technology and the top-cool T2PAK format, onsemi continues to expand its capabilities in delivering advanced silicon carbide solutions for next-generation power electronics.
Original – onsemi
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X-FAB is streamlining the development of advanced silicon carbide (SiC) power devices through its latest XbloX platform. This modular, scalable platform enables SiC device designers to transition from prototyping to full-scale production significantly faster—achieving production ramp-up up to nine months ahead of traditional development methods.
The third generation of the XbloX platform (XSICM03) introduces advanced capabilities tailored for high-performance planar SiC MOSFETs. It reduces cell pitch and improves on-state resistance, which enables up to 30% more dies per wafer and supports compact, efficient power device designs. The platform is optimized for high-growth sectors such as automotive, industrial automation, energy, and datacenter infrastructure, where next-generation SiC MOSFETs are in high demand.
XbloX provides two key benefits for device developers: first, X-FAB takes ownership of core process development activities by offering a Process Installation Kit (PIK) that contains pre-qualified process modules and implant recipes. Second, the standardized and modular configuration of the platform transforms wafer manufacturing into a scalable process, moving beyond the limitations of customer-specific production models.
The result is a dramatic reduction in development time, risk, and engineering resources. Customers benefit from an accelerated onboarding process—up to six times faster than conventional methods—and a guided approach that simplifies design, mask tooling, and process selection. Once process blocks are selected, XbloX automatically generates an integrated process flow that incorporates quality controls, business systems, and commercial terms.
“Thanks to a PIK, qualified SiC process development modules, and an automated onboarding process, customers need do little more than access our global hotline for support on block selection and deployment,” said Brian Throneberry, Business Director SiC Foundry at X-FAB. “We have robust rules in place to help guide design, mask tooling, engagement, and so on. Once the selection is finalized, XbloX automatically generates the process flow, which subsequently integrates quality systems, business functions, and commercial aspects for the customer.”
The XSICM03 platform continues to build on X-FAB’s leadership in wide-bandgap semiconductor manufacturing by aligning SiC process integration with CMOS-modeled specifications, design rules, and control plans. Customers will also benefit from future advancements as new modules are added to the XbloX ecosystem.
By offering a standardized, high-performance, and highly scalable solution for SiC device manufacturing, X-FAB’s XbloX platform positions itself as a strategic enabler for fabless power semiconductor developers aiming to accelerate time to market and expand product portfolios efficiently.
Original – X-FAB
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Micro Commercial Components (MCC) has introduced the MCTT1D7N10Y, a 100V power MOSFET housed in a TO-Leaded Topside Cooling (TOLT) package, engineered to deliver exceptional thermal performance and rugged reliability. Designed for space-constrained, high-demand environments such as industrial systems and server-grade power electronics, the MCTT1D7N10Y combines high current capability with advanced thermal management.
Topside cooling is a thermal architecture that allows heat to be dissipated directly from the top of the package. Unlike conventional bottom-cooled designs that rely on the printed circuit board (PCB) for heat transfer, the TOLT package features an exposed drain pad on the top surface, enabling direct thermal contact with a heatsink, cold plate, or thermal interface material (TIM). This approach significantly shortens the thermal path, resulting in more efficient heat dissipation and enhanced device performance.
By removing the PCB from the primary thermal path, topside cooling enables lower junction temperatures, greater current handling with minimal derating, simplified PCB layouts, and extended system longevity through reduced thermal stress on adjacent components.
Key features of the MCTT1D7N10Y include:
- 100V N-channel MOSFET with maximum RDS(on) of 1.7 mΩ
- TO-Leaded Topside Cooling (TOLT) package with exposed drain for efficient heat transfer
- Direct die-to-heatsink thermal path bypassing the PCB
- Junction-to-case thermal resistance (RthJC) of 0.36 K/W
- Low-profile package suited for compact designs
- High current capability with strong thermal cycling robustness
With its combination of electrical performance and advanced packaging, the MCTT1D7N10Y offers an ideal solution for designers seeking to enhance power density, efficiency, and reliability in next-generation industrial and data-centric power applications.
Original – Micro Commercial Components
