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ROHM has commenced mass production of its SCT40xxDLL series silicon carbide (SiC) MOSFETs in TO-Leadless (TOLL) packages, offering a significant 39% improvement in thermal performance compared to conventional TO-263-7L packages with equivalent voltage ratings and on-resistance. The new series is designed to meet the growing demand for compact, high-power components in applications such as AI server power supplies and energy storage systems (ESS), where power density and miniaturization are increasingly critical.
As modern industrial and consumer equipment evolves, applications such as compact photovoltaic (PV) inverters and high-efficiency server systems face dual requirements: increasing power capability and reduced system size. This is especially true for power factor correction (PFC) circuits in slim-profile “pizza box” server power supplies, where discrete semiconductors must conform to strict thickness constraints of 4 mm or less.
ROHM’s SCT40xxDLL series responds to these requirements with a compact 2.3 mm low-profile form factor—approximately 50% thinner than traditional equivalents—and a reduced component footprint by about 26%. The series also distinguishes itself with a rated drain-source voltage of up to 750 V, surpassing the standard 650 V found in many TOLL package MOSFETs. This higher voltage rating contributes to increased surge voltage tolerance, lower gate resistance requirements, and reduced switching losses.
The SCT40xxDLL lineup includes six models with typical on-resistance values ranging from 13 mΩ to 65 mΩ. Maximum current ratings span up to 120 A, depending on the device, making them suitable for a wide range of high-performance power conversion systems. Mass production began in September 2025.
SCT40xxDLL Series Overview:
Part Number VDSS Max (V) RDS(on) Typ (mΩ) ID Max (A) PD Max (W) Storage Temp (°C) SCT4013DLL 750 13 120 405 -40 to +175 SCT4020DLL 750 20 80 277 -40 to +175 SCT4026DLL 750 26 61 214 -40 to +175 SCT4036DLL 750 36 46 164 -40 to +175 SCT4045DLL 750 45 37 133 -40 to +175 SCT4065DLL 750 65 26 100 -40 to +175 These devices are suitable for use in:
- Industrial power supplies for AI servers and data centers
- Photovoltaic inverters and ESS
- General-purpose consumer power supply applications
ROHM also provides simulation models for all six variants via its official website to assist engineers with rapid circuit evaluation and design. The SCT40xxDLL series is available through authorized distributors.
Original – ROHM
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Infineon Technologies AG has announced that it will supply customized silicon carbide (SiC) power modules to Electreon, a leader in wireless electric vehicle (EV) charging technology. These modules will be integrated into Electreon’s dynamic in-road wireless charging infrastructure, which enables EVs to charge while driving via inductive power transfer.
Electreon’s wireless electric road system (wERS) embeds copper coils beneath road surfaces, transferring energy to vehicles in motion—such as trucks, buses, and passenger cars—without the need to stop and plug in. The coils are connected to the power grid and are activated when a compatible vehicle passes overhead. Infineon’s SiC modules serve as the core component of this system, efficiently converting grid power into inductive charging energy. This enables reliable, seamless, and energy-efficient charging in high-traffic zones including highways, ports, and mobility hubs like airports.
The customized EasyPACK™ 3B CoolSiC™ 2000 V modules developed by Infineon have been tailored to meet Electreon’s unique requirements. These modules support continuous power transfer with an average output of 200 kW and peak capabilities exceeding 300 kW. Their performance was validated during a recent deployment on France’s A10 highway, marking the world’s first highway to provide dynamic wireless charging for various types of electric vehicles in motion.
By enabling on-the-move charging, the system significantly reduces EV battery size requirements, leading to lower upfront vehicle costs, reduced weight, and increased cargo capacity. Electreon has already deployed Infineon’s customized modules in test installations across the U.S., Germany, France, Norway, Portugal, Sweden, Italy, Israel, and Japan, with plans for broader integration in long-distance routes.
“Electreon’s wireless charging system is a real game changer on the road to reducing carbon emissions in transportation,” said Dominik Bilo, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon Technologies. “We’re proud to contribute to this groundbreaking innovation with our customized SiC power modules, which efficiently convert electrical energy to charge vehicles on the go, tailored to meet Electreon’s specific needs.”
“Wireless EV charging is already happening today, and Electreon is at the forefront of this transformation,” added Electreon CEO Oren Ezer. “We’re using Infineon’s advanced silicon carbide technology to make in-road charging even more powerful and efficient, allowing electric buses and trucks to operate continuously without relying on traditional charging stations.”
Silicon carbide semiconductors have become instrumental in high-power applications like EV charging due to their ability to operate at higher frequencies with reduced energy loss, support more compact system designs, and perform reliably under extreme environmental conditions. With this collaboration, Infineon and Electreon are advancing the adoption of scalable, clean, and efficient mobility infrastructure worldwide.
Original – Infineon Technologies
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Coherent Corp. has announced a significant advancement in its next-generation 300mm silicon carbide (SiC) platform, addressing the growing need for enhanced thermal efficiency in AI datacenter infrastructure.
Building on its established expertise in 200mm SiC technology, Coherent has developed a 300mm solution designed to support the increasing power density and heat dissipation requirements of next-generation datacenters. This development marks a key milestone in the industry’s shift toward larger-diameter SiC substrates, offering improved scalability, faster switching performance, and superior thermal management for high-performance computing environments.
The new platform delivers conductive SiC substrates characterized by low resistivity, low defect density, and high material homogeneity—features that are critical for achieving high-frequency operation, low energy dissipation, and thermal stability in demanding AI and data infrastructure applications.
“AI is transforming the thermal-management landscape in datacenters, and silicon carbide is emerging as one of the foundational materials enabling this scalability,” said Gary Ruland, Senior Vice President and General Manager at Coherent. “Our 300mm platform, which we plan to ramp in high volumes, delivers new levels of thermal efficiency that translate directly into faster, more power-efficient AI datacenters.”
In addition to datacenter applications, Coherent is expanding the use of its SiC technology in augmented and virtual reality (AR/VR) devices and power electronics. For AR smart glasses and VR headsets, the 300mm SiC substrates support thinner, more efficient waveguides, enhancing performance and reliability in compact optical modules. In power electronics, the larger wafer size enables higher device yields and lower cost per chip, supporting a range of applications including electric vehicles, renewable energy systems, and industrial automation.
The introduction of the 300mm SiC platform solidifies Coherent’s leadership in wide-bandgap semiconductor materials and underscores its commitment to enabling innovation across datacenter infrastructure, optics, and power electronics.
Original – Coherent
