U.S. ITC Issues Preliminary Ruling in Favor of Infineon in GaN Patent Dispute Against Innoscience

The U.S. International Trade Commission (ITC) has issued a preliminary ruling finding that Innoscience has violated one of the gallium nitride (GaN) technology patents held by Infineon Technologies AG. The ITC also confirmed the legal validity of both patents asserted by Infineon in the case.

The dispute centers on Innoscience’s alleged unauthorized use of Infineon’s patented GaN technologies. A final determination by the ITC is expected on April 2, 2026. Should the preliminary ruling be upheld, it will result in an import ban of the allegedly infringing Innoscience products into the United States.

“This ruling is another testament to the strength of Infineon’s intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line. “We remain dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.”

The decision in the U.S. adds to a series of favorable outcomes for Infineon in similar disputes. In a separate case in Germany, the German patent office recently upheld the validity of an Infineon GaN patent in a slightly amended form, and Infineon is pursuing infringement claims related to that patent in the Munich District Court. Additionally, in August 2025, the Munich District Court I ruled that another Infineon GaN patent had been infringed by Innoscience.

Infineon is a leading integrated device manufacturer in the GaN market and holds one of the industry’s most extensive intellectual property portfolios, with approximately 450 GaN patent families. GaN is a critical technology for high-performance, energy-efficient power systems used in applications ranging from renewable energy and AI data centers to industrial automation and electric vehicles.

By mastering all three essential materials in power electronics—silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)—Infineon continues to play a pivotal role in advancing semiconductor innovation to support the global push for energy efficiency and sustainability.

Original – Infineon Technologies