onsemi has signed a memorandum of understanding (MoU) with Innoscience to explore a strategic collaboration focused on expanding the production of gallium nitride (GaN) power devices. The agreement leverages Innoscience’s proven 200mm GaN-on-silicon process and high-volume manufacturing capabilities, alongside onsemi’s strengths in system integration, drivers, and packaging, with the shared goal of accelerating the delivery of cost-effective, energy-efficient GaN solutions to a global market.

The collaboration aims to address the growing demand for high-efficiency power systems across industrial, automotive, telecom, consumer, and AI data center applications by combining onsemi’s GaN power solutions with Innoscience’s manufacturing scale. Initial focus will be on the low and medium-voltage GaN range (40–200V), with future development plans targeting a global GaN power device market projected to reach $2.9 billion by 2030.

Key benefits of the collaboration include:

  • Expanded GaN Portfolio: The partnership supports the extension of onsemi’s low and medium-voltage GaN product line.
  • Scalable Manufacturing: Access to Innoscience’s high-volume 200mm GaN-on-silicon capacity enables true mass-market deployment.
  • System-Level Innovation: Combines advanced packaging, drivers, and integration expertise to support rapid time-to-market and cost-effective system design.
  • Market Reach: Enables high-efficiency, compact power solutions for motor drives, EV converters, DC-DC power supplies, telecom infrastructure, and data centers.

Antoine Jalabert, Vice President of Corporate Strategy at onsemi, noted: “As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Through a collaboration with Innoscience, we expect to access the industry’s largest GaN production footprint and quickly scale our offerings to enable broader adoption in mainstream applications.”

Yi Sun, Senior Vice President of Product & Engineering at Innoscience, added: “GaN technology is essential to building more efficient power systems and reducing global energy consumption. We are excited to explore this collaboration with onsemi to accelerate GaN adoption and establish a platform for integrated system development.”

onsemi expects to begin sampling initial devices in the first half of 2026. This initiative builds upon its comprehensive intelligent power portfolio, which includes silicon, silicon carbide (SiC), and GaN technologies—positioning the company to deliver optimal power systems across next-generation electrified and AI-driven markets.

Original – onsemi