Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) SiC products. Offered in power module, discrete, and known good die (KGD) formats, these devices set a new standard in performance and reliability for high-power applications including solid-state transformers, grid infrastructure, renewable energy, and AI data centers.
The new UHV devices are built on Navitas’ fourth-generation GeneSiC™ platform, featuring a proprietary Trench-Assisted Planar (TAP) MOSFET architecture. This design incorporates a multi-step electric field management profile that reduces voltage stress and enhances blocking performance compared to traditional planar and trench SiC MOSFETs. The TAP structure also improves avalanche robustness and long-term reliability, supported by optimal source contact engineering for better cell-pitch density and current spreading. These innovations lead to superior switching characteristics and lower on-resistance at high operating temperatures.
The new devices are available in the advanced SiCPAK™ G+ power module format, in both half-bridge and full-bridge configurations. These modules incorporate epoxy-resin potting technology that provides over 60% improvement in power cycling lifetime and more than 10x improvement in thermal shock reliability compared to conventional silicone-gel-based modules. Key features include:
- AlN DBC substrates for enhanced heat dissipation
- High-current press-fit pins with double the current-carrying capacity
- Discrete packages available in TO-247 and TO-263-7 formats
Navitas has introduced AEC-Plus, an industry-first reliability benchmark that goes beyond AEC-Q101 and JEDEC standards. This qualification covers a wide range of rigorous test protocols, including:
- Dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing
- Over 3x extended high-temperature and high-voltage testing (HTRB, HTGB)
- HV-THB for modules and HV-H3TRB for discretes and KGD
- Extended power and temperature cycling
The 3300V and 2300V devices are also offered as known good die (KGD), enabling system designers to build custom high-performance modules. Navitas applies stringent production screening, including singulated die testing at room and elevated temperatures, and six-side optical inspection to ensure the highest levels of quality, reliability, and yield.
“Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centers, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, Vice President and General Manager of the SiC Business Unit.
Wheeler added, “This line of reliable, high-performance ultra-high voltage power semiconductors is expected to be a significant step in our roadmap to 10 kV SiC solutions. By combining our proprietary Trench-Assisted Planar SiC MOSFET technology with innovative power packages, we are able to extend reliability qualification and support more stringent production screening, to deliver industry-leading performance and robustness.”
The new SiC portfolio underscores Navitas’ strategic commitment to advancing ultra-high voltage power electronics for critical energy infrastructure and high-density computing environments.
Original – Navitas Semiconductor