-
Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) SiC products. Offered in power module, discrete, and known good die (KGD) formats, these devices set a new standard in performance and reliability for high-power applications including solid-state transformers, grid infrastructure, renewable energy, and AI data centers.
The new UHV devices are built on Navitas’ fourth-generation GeneSiC™ platform, featuring a proprietary Trench-Assisted Planar (TAP) MOSFET architecture. This design incorporates a multi-step electric field management profile that reduces voltage stress and enhances blocking performance compared to traditional planar and trench SiC MOSFETs. The TAP structure also improves avalanche robustness and long-term reliability, supported by optimal source contact engineering for better cell-pitch density and current spreading. These innovations lead to superior switching characteristics and lower on-resistance at high operating temperatures.
The new devices are available in the advanced SiCPAK™ G+ power module format, in both half-bridge and full-bridge configurations. These modules incorporate epoxy-resin potting technology that provides over 60% improvement in power cycling lifetime and more than 10x improvement in thermal shock reliability compared to conventional silicone-gel-based modules. Key features include:
- AlN DBC substrates for enhanced heat dissipation
- High-current press-fit pins with double the current-carrying capacity
- Discrete packages available in TO-247 and TO-263-7 formats
Navitas has introduced AEC-Plus, an industry-first reliability benchmark that goes beyond AEC-Q101 and JEDEC standards. This qualification covers a wide range of rigorous test protocols, including:
- Dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing
- Over 3x extended high-temperature and high-voltage testing (HTRB, HTGB)
- HV-THB for modules and HV-H3TRB for discretes and KGD
- Extended power and temperature cycling
The 3300V and 2300V devices are also offered as known good die (KGD), enabling system designers to build custom high-performance modules. Navitas applies stringent production screening, including singulated die testing at room and elevated temperatures, and six-side optical inspection to ensure the highest levels of quality, reliability, and yield.
“Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centers, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, Vice President and General Manager of the SiC Business Unit.
Wheeler added, “This line of reliable, high-performance ultra-high voltage power semiconductors is expected to be a significant step in our roadmap to 10 kV SiC solutions. By combining our proprietary Trench-Assisted Planar SiC MOSFET technology with innovative power packages, we are able to extend reliability qualification and support more stringent production screening, to deliver industry-leading performance and robustness.”
The new SiC portfolio underscores Navitas’ strategic commitment to advancing ultra-high voltage power electronics for critical energy infrastructure and high-density computing environments.
Original – Navitas Semiconductor
-
Infineon Technologies AG has announced the early extension of the contract of Elke Reichart (60), Chief Digitalization and Sustainability Officer (CDSO) and member of the Management Board. The new contract extends her term through October 31, 2030. Her original contract was set to expire in October 2026.
In her role as CDSO, Elke Reichart will continue to lead Infineon’s global digitalization initiatives, oversee IT infrastructure, and steer the company’s group-wide sustainability strategy. The Supervisory Board cited her leadership and deep expertise as instrumental in advancing the company’s digital and environmental transformation.
“Digitalization and sustainability are key success factors for Infineon. Elke Reichart represents both topics with expertise, enthusiasm, and credibility,” said Herbert Diess, Chairman of Infineon’s Supervisory Board. “The Supervisory Board is convinced that she will continue to provide valuable impulses and make a significant contribution to Infineon’s success in the future.”
Infineon’s Chief Executive Officer, Jochen Hanebeck, added: “With Elke Reichart we have made significant progress in the green and digital transformation of our company. We know digitalization is a key lever for accelerating our innovation-to-customer value. I look forward to many more years of trusting collaboration on the Management Board.”
Elke Reichart expressed her commitment to driving Infineon’s transformation efforts: “Every day, we are working to make Infineon even more sustainable and digital. Our strategy is in place; now we focus on implementation—simplifying processes, standardization, and further utilization of the possibilities of AI. I am grateful to the Supervisory Board for their trust and for the mandate to continue driving forward this dual transformation of sustainability and digitalization.”
The contract extension reflects Infineon’s strong commitment to embedding sustainability and digital innovation across all levels of the organization.
Original – Infineon Technologies
-
Alpha and Omega Semiconductor Limited has introduced the AOLV66935—a 100V High Safe Operating Area (SOA) MOSFET in a compact LFPAK 8×8 package. Engineered to meet the increasing power and reliability demands of 48V hot swap applications in AI servers, the device delivers low conduction losses, robust thermal performance, and space-saving benefits for advanced system architectures.
The AOLV66935 is built on AOS’ proprietary 100V AlphaSGT™ MOSFET platform, which merges low on-resistance trench technology with enhanced SOA capability. The device has been rigorously tested and characterized at both 25°C and elevated operating conditions up to 125°C, ensuring stable and reliable performance in thermally demanding environments typical of AI servers.
Designed for high-current switching, the LFPAK 8×8 package features gull-wing leads and advanced clip technology, achieving a 60% smaller footprint compared to the TO-263 (D2PAK) while maintaining high current handling. The package’s low thermal resistance and compatibility with automated optical inspection (AOI) processes make it well-suited for space-constrained, high-reliability server applications.
Key performance metrics include a low RDS(on) of 1.86 milliohms (max) at Vgs = 10V, which minimizes conduction losses and reduces the number of devices needed in parallel—enabling more compact designs without compromising efficiency or thermal integrity.
“To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega Semiconductor. “AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8×8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required, allowing designers to meet space limitations.”
Manufactured in IATF 16949-certified facilities, the AOLV66935 is optimized to support the next generation of AI infrastructure requiring high-efficiency power switching and thermal durability under harsh operating conditions.
Original – Alpha and Omega Semiconductor
