Littelfuse has introduced the MMIX1T500N20X4, a 200V N-channel ultra-junction power MOSFET designed for high-current applications requiring low conduction losses and improved thermal performance.
Key Specifications:
- Blocking Voltage: 200 V
- Drain Current (ID): 480 A
- On-Resistance (RDS(on)): 1.99 mΩ
- Gate Charge (Qg): 535 nC
- Thermal Resistance (Rth(j-c)): 0.14 °C/W
- Isolation Voltage: 2500 VRMS
The device is housed in a ceramic-based, isolated SMPD-X package with topside cooling, which supports simplified thermal management and higher power density. Compared to other X4-Class MOSFETs, the MMIX1T500N20X4 offers significantly lower RDS(on) and higher current capability, allowing for consolidation of paralleled MOSFETs in system designs.
Target Applications:
- DC load switching
- Battery energy storage systems
- Industrial power supplies and process control
- Charging infrastructure
- Power electronics for drones and VTOL platforms
This MOSFET is suitable for systems requiring compact, high-efficiency, and high-reliability solutions in medium-voltage ranges.
Original – Littelfuse