Innoscience and Allegro MicroSystems have announced a collaborative 4.2kW all-GaN power reference design aimed at meeting the efficiency and density demands of next-generation AI data centers and edge computing platforms.
The solution integrates Innoscience’s proprietary GaN power transistors with Allegro’s AHV85110 isolated gate driver, known for its integrated bias supply and self-powered architecture. This combination enables Titanium-grade efficiency and power densities exceeding 100 W/in³, addressing both performance and compactness requirements in high-power computing environments.
The reference design leverages a fully GaN-based architecture optimized for fast switching and low electromagnetic interference (EMI). The AHV85110 driver’s low common-mode capacitance and integrated power supply contribute to simplified system design, reducing passive component count on the driver board by up to 80% and enabling a 15% reduction in total system components.
This collaboration underscores the growing role of GaN in AI and hyperscale infrastructure, offering benefits in thermal design, board layout, and system integration. With this solution, engineers gain a ready-to-use platform that supports the development of compact, high-efficiency power conversion systems suitable for evolving compute-intensive applications.
The 4.2kW reference design is now available from Innoscience and provides a robust foundation for accelerating development in high-performance power electronics.
Original – Innoscience Technology