Micro Commercial Components (MCC) has introduced its fourth-generation Silicon Carbide (SiC) Schottky Barrier Diodes, engineered to tackle key challenges in high-performance power electronics, including thermal management, board space limitations, and long-term reliability under high-frequency and high-temperature conditions.
Built on MCC’s advanced SiC platform, the new devices offer low forward voltage (Vf) and ultra-low switching losses. This combination reduces conduction and switching dissipation, enabling downsized heatsinks and increased power density across various applications.
The diodes feature a positive temperature coefficient, which ensures safe current sharing during parallel operation and improved thermal stability. With negligible reverse recovery, they enable clean switching at high frequencies while minimizing electromagnetic interference (EMI). These attributes make them particularly well-suited for applications in power factor correction (PFC) stages, switching power supplies, motor drives, and traction systems.
Key specifications include:
- Voltage ratings: 650 V and 1200 V
- Current ratings: 2 A and 4 A
- Package types: TO-220AC and ITO-220AC
- Wide operating temperature range for consistent performance
- Compact packages that simplify integration and improve thermal conduction
MCC’s Gen4 SiC Schottky Diodes deliver robust, reliable performance for modern power designs that demand high efficiency, thermal resilience, and design flexibility.
Original – Micro Commercial Components