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Nexperia B.V. has issued an update regarding recent developments impacting its global supply chain and corporate governance structure.
The Dutch Minister of Economic Affairs has decided to temporarily suspend enforcement of an earlier order under the Goods Availability Act, citing recent positive developments. Nexperia welcomed the constructive dialogue between Dutch and Chinese authorities, viewing it as a step toward restoring stability across its supply chain. However, the company noted that full recovery will depend on continued cooperation from its operations in China.
The ruling by the Dutch Enterprise Chamber on October 7, 2025, remains in effect:
- Zhang Xuezheng remains suspended and does not act as CEO of Nexperia.
- Voting rights in Nexperia’s shares, indirectly held by Wingtech Technology Co. Ltd., remain under the control of a court-appointed independent administrator.
Stefan Tilger continues as interim CEO, with Achim Kempe as COO. Ruben Lichtenberg and Guido Dierick serve as statutory and non-executive directors, respectively.
Operationally, Nexperia confirmed that wafer shipments have not been halted. The company continues to deliver wafers and offer alternative supply routes to mitigate disruptions. These efforts are supported by dedicated teams ensuring business continuity. Other Nexperia sites across Europe and Asia remain fully operational, with phased capacity expansions planned throughout 2026.
However, the company highlighted significant challenges from its entities in China, including:
- Refusal to remit payments for wafer shipments
- Unauthorized use of company seals and creation of unapproved bank accounts
- Distribution of inaccurate communications to customers and partners
Despite these disruptions, Nexperia maintained direct shipments during October 2025, even under Chinese export restrictions. The company estimates that sufficient inventory exists within its Chinese operations to continue production for several months, and any reported shortfalls are attributed to questionable local stock management.
Nexperia reaffirmed its commitment to transparency, operational continuity, and support for its customers, partners, and stakeholders worldwide. The company will continue to issue updates as developments unfold.
Original – Nexperia
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GlobalFoundries and Navitas Semiconductor have announced a long-term strategic partnership focused on advancing gallium nitride (GaN) technology, design, and manufacturing capabilities within the United States. This collaboration aims to deliver next-generation GaN solutions for high-power applications including AI datacenters, performance computing, energy infrastructure, and industrial electrification—markets where power density and energy efficiency are critical.
Navitas Semiconductor, a pioneer in GaN and high-voltage silicon carbide (SiC) technologies, has already achieved volume GaN adoption across applications such as mobile fast chargers, performance computing, electric vehicles, and energy storage. Through this new initiative, the company plans to accelerate the deployment of GaN in high-power domains.
GlobalFoundries brings decades of semiconductor manufacturing experience, with a focus on scalable and high-reliability production. Under this partnership, the companies will jointly develop and manufacture GaN technology at GlobalFoundries’ Burlington, Vermont facility. Initial development is scheduled for early 2026, with volume production expected to begin later that year.
By combining GlobalFoundries’ advanced manufacturing infrastructure with Navitas Semiconductor’s proven device technology, the partnership is set to offer customers secure, high-performance GaN solutions developed domestically. The collaboration supports national security priorities and the transition to cleaner energy systems.
“GaN is transforming how the world moves power. This partnership represents a significant step forward for U.S. semiconductor leadership and the deployment of GaN technology to address essential applications,” said Tim Breen, CEO of GlobalFoundries.
Chris Allexandre, President and CEO of Navitas Semiconductor, added: “Our collaboration with GlobalFoundries ensures that Navitas can deliver the performance, efficiency, and scale required by high-power markets. Together, we are laying the foundation for next-generation applications essential to national competitiveness and energy sustainability.”
Original – Navitas Semiconductor
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Micro Commercial Components (MCC) has introduced its fourth-generation Silicon Carbide (SiC) Schottky Barrier Diodes, engineered to tackle key challenges in high-performance power electronics, including thermal management, board space limitations, and long-term reliability under high-frequency and high-temperature conditions.
Built on MCC’s advanced SiC platform, the new devices offer low forward voltage (Vf) and ultra-low switching losses. This combination reduces conduction and switching dissipation, enabling downsized heatsinks and increased power density across various applications.
The diodes feature a positive temperature coefficient, which ensures safe current sharing during parallel operation and improved thermal stability. With negligible reverse recovery, they enable clean switching at high frequencies while minimizing electromagnetic interference (EMI). These attributes make them particularly well-suited for applications in power factor correction (PFC) stages, switching power supplies, motor drives, and traction systems.
Key specifications include:
- Voltage ratings: 650 V and 1200 V
- Current ratings: 2 A and 4 A
- Package types: TO-220AC and ITO-220AC
- Wide operating temperature range for consistent performance
- Compact packages that simplify integration and improve thermal conduction
MCC’s Gen4 SiC Schottky Diodes deliver robust, reliable performance for modern power designs that demand high efficiency, thermal resilience, and design flexibility.
Original – Micro Commercial Components
