GE Aerospace has successfully demonstrated its fourth-generation Silicon Carbide (SiC) power MOSFETs at its Research Center in Niskayuna, New York. These advanced semiconductor devices mark a major step forward in switching speed, efficiency, and thermal durability across a range of high-demand applications.
The new Gen-4 SiC MOSFETs are available in a compact 5mm x 5mm chip format, offering 1200V blocking voltage and an impressively low RDS(on) of 11 mΩ. They also feature an industry-leading temperature rating of 200°C. Designed to meet the growing demands of electrification and energy efficiency, these devices are poised to support applications in automotive electrification, AI data centers, renewable energy, and industrial power systems.
Kris Shepherd, President and GM of Electrical Power Systems at GE Aerospace, noted that this generation of SiC devices offers a “step change in performance,” providing significant gains in efficiency, reliability, and power density across sectors including electric mobility, energy, and computing infrastructure.
As demand surges for efficient power solutions—driven by the expansion of AI data centers, electric vehicles, and energy infrastructure—SiC has emerged as a key enabler. Its superior power density and switching speed allow for compact, high-performance systems that traditional silicon-based devices can’t match.
GE Aerospace’s latest SiC MOSFETs are particularly well suited for high-stress, high-speed environments. In motorsport and performance vehicles, they enable advanced traction inverter systems that capture and redeploy energy during braking. In AI data centers, higher-voltage SiC switches simplify power architecture, reducing conversion losses and minimizing physical footprint.
These developments build on over 20 years of dedicated R&D, a robust intellectual property portfolio, and deep domain expertise in aerospace electrical systems.
GE Aerospace already provides SiC-based electric power generation, distribution, and conversion systems for aerospace, marine, and defense applications. With Gen-4 SiC MOSFETs now demonstrated, the company is also expanding its focus into automotive and data center industries, where demand for high-efficiency, compact, and thermally robust power solutions continues to accelerate.
This milestone highlights GE Aerospace’s leadership in power semiconductor innovation and its continued contribution to the electrification of transportation, computing, and energy infrastructure.
Original – GE Aerospace