Infineon Technologies AG announced the integration of its advanced gallium nitride (GaN) technology into the next generation of solar microinverters from Enphase Energy, Inc. The collaboration highlights Infineon’s CoolGaN™ bi-directional switch (BDS) as a key enabler of higher power output, greater energy efficiency, and improved system reliability in Enphase’s new IQ9 Series Microinverters.
Specifically, the IQ9N-3P™ Commercial Microinverter benefits from simplified system design and reduced installation and balance-of-system costs. The use of CoolGaN BDS technology allows for compact and highly efficient power conversion by enabling single-stage operation and replacing multiple unidirectional switches with a single bi-directional device. This innovation significantly reduces power loss—outperforming conventional silicon switches by 68% and GaN unidirectional switches by 42%.
“As a market leader in power semiconductors, Infineon masters all relevant materials: silicon (Si), silicon carbide (SiC), and gallium nitride,” said Adam White, Division President, Power & Sensor Systems at Infineon Technologies AG. “The development of GaN technology is a key part of our vision, offering the most efficient power semiconductor solutions for companies like Enphase to create high-performance, efficient applications to drive the widespread adoption of photovoltaic systems.”
Ron Swenson, Senior Vice President of Operations at Enphase Energy, added, “Utilizing Infineon’s CoolGaN bi-directional switch technology allows us to service a much larger segment of the commercial market with our IQ9 Series Microinverters. This teamwork highlights our commitment to ongoing innovation in the solar energy industry. We’re excited by the performance gains enabled by GaN-powered technology and look forward to deepening our long-term partnership with Infineon.”
The CoolGaN BDS is a critical technology for renewable energy applications, including solar photovoltaics, wind power, energy storage systems, electric vehicle motor drives, on-board chargers, and high-performance AI servers—applications that demand maximum efficiency, power density, and long-term reliability.
The collaboration aligns with both companies’ commitment to addressing global renewable energy demand. According to the International Energy Agency, solar PV accounted for approximately 7% of total global electricity generation in 2024. By 2030, solar PV is projected to contribute to 80% of new renewable capacity additions, totaling over 5500 GW.
Infineon continues to expand its GaN leadership, with more than 40 new product announcements over the past year. The company is progressing on the transition to scalable GaN production using 300-millimeter wafers, further enhancing its capacity to meet growing global demand for high-efficiency power devices.
Through this partnership, Infineon and Enphase are advancing the performance and reach of solar technologies, supporting the global shift toward clean energy and decarbonization.
Original – Infineon Technologies