Veeco Instruments Inc. has announced the receipt of a purchase order for its Propel®300 metal-organic chemical vapor deposition (MOCVD) system from a major integrated device manufacturer (IDM) specializing in power semiconductors. The system will be used for gallium nitride (GaN) epitaxial growth on 300 mm silicon (Si) wafers, underscoring Veeco’s established leadership in 300 mm MOCVD technology.

The order builds on Veeco’s long-standing expertise and history of Propel®300 shipments across the compound semiconductor sector. The platform’s qualification for 300 mm GaN-on-Si epitaxy specifically for power device applications represents a significant milestone in enabling broader commercialization of GaN technology.

“Qualifying Propel®300 for 300 mm GaN-on-Si epitaxy for power devices is a significant achievement in the path to widespread adoption of GaN technology,” stated Anil Vijayendran, Vice President of MOCVD Product Line Management at Veeco. “Moving from 200 mm to 300 mm enables customers to achieve 2.3 times more chips per wafer while utilizing existing 300 mm production infrastructure, which ultimately reduces device costs.”

GaN technology offers high efficiency and superior thermal and switching characteristics that can reduce the size and weight of power systems. These attributes are driving its adoption in critical sectors such as automotive, industrial, and data centers. According to Yole Group, the global GaN device market is projected to expand at a 35% compound annual growth rate from $555 million in 2025 to $2.5 billion by 2030. This growth is expected to be driven in part by rising power demands associated with artificial intelligence workloads and the corresponding need for more efficient power delivery systems.

The Propel®300 system, built on Veeco’s TurboDisc MOCVD technology, is designed for high-performance GaN epitaxy with industry-leading uniformity in thickness and doping. It also offers low defectivity, high productivity, and fully automated wafer handling. Combined with extended campaign runs that do not require in-situ cleaning and a user-friendly design, these features result in a highly competitive cost of ownership per wafer.

With this order, Veeco continues to reinforce its role as a key enabler of scalable GaN production and innovation for next-generation power electronics.

Original – Veeco Instruments