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Texas Instruments (TI) has announced the opening of its newest state-of-the-art assembly and test facility, TIEM2, located in Melaka, Malaysia. This latest investment marks a significant milestone in TI’s long-term strategy to expand internal manufacturing capacity and strengthen supply chain resilience.
The new six-level factory spans more than 900,000 square feet and is now fully operational. Connected to TI’s existing assembly and test factory in Melaka, the combined facilities now provide more than 1.4 million square feet of manufacturing space dedicated to transforming processed semiconductor wafers into finished chips. The factory is designed to bump, probe, assemble, and test billions of analog and embedded chips annually for a wide range of applications, including automotive systems, smartphones, industrial automation, and data centers.
Representing a potential investment of up to MYR 5 billion, the TIEM2 facility is expected to support up to 500 local jobs once fully ramped. The factory is part of TI’s broader initiative to bring 90 percent of its assembly and test operations in-house by 2030, reinforcing its long-standing commitment to internal manufacturing and operational control.
To mark the official opening, TI hosted Melaka Chief Minister Datuk Seri Utama Ab Rauf Yusoh and other dignitaries for a tour of the site.
“Texas Instruments’ investment in Melaka is a strong endorsement of our state’s potential,” said Datuk Seri Utama Ab Rauf Yusoh. “When fully operational, this facility will generate hundreds of new high-quality jobs and contribute significantly to Melaka’s industrial and technological growth.”Subbah Rao, vice president and country managing director for Texas Instruments Malaysia, added:
“For more than 50 years, TI has built its presence in Malaysia, and this new factory underscores the talent and expertise of our team here. Our Melaka expansion strengthens our internal manufacturing capabilities, enabling us to reliably deliver products to our customers when and where they need them.”TI has a global footprint of 15 manufacturing sites, including wafer fabs, assembly and test factories, and bump and probe operations. The addition of this new facility enhances TI’s manufacturing ecosystem in Malaysia, complementing existing operations in both Melaka and Kuala Lumpur and enabling greater scalability and operational efficiency.
TIEM2 was also designed with sustainability in mind and is on track to achieve Leadership in Energy and Environmental Design (LEED) Gold certification. Advanced factory equipment helps minimize energy, water, and waste consumption per chip, aligning with TI’s commitment to responsible manufacturing practices.
With this expansion, TI continues to build on its decades-long legacy in Malaysia, advancing innovation and supporting customer demand across global markets.
Original – Texas Instruments
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Nexperia B.V. has issued an important update regarding recent developments that are impacting its global operations, governance structure, and supply chain. The company affirms its commitment to transparency, business continuity, and the interests of its global customers, suppliers, employees, and stakeholders.
Nexperia welcomed the one-year suspension by U.S. authorities of the “Affiliate Rule,” which had previously extended U.S. export control restrictions to companies owned 50 percent or more by entities listed on the U.S. Entity List. This rule had potential implications for Nexperia as a wholly owned subsidiary of Wingtech Technology Co., Ltd., which was added to the U.S. BIS Entity List in December 2024.
The company also acknowledged China’s renewed commitment to facilitating the resumption of exports from both Nexperia’s Chinese manufacturing site and its subcontractors. This step will help restore the supply of critical legacy semiconductors to global markets. Nexperia is awaiting further clarification on the procedures and criteria related to this easing of export restrictions.
Despite these positive developments, Nexperia reported that certain corporate governance protocols have not been followed within its Chinese entities. As of October 13, Nexperia B.V. no longer has oversight of product shipments from its facility in China. Due to this lack of transparency, the company cannot guarantee the authenticity, intellectual property compliance, or quality of any products manufactured or shipped from that site.
On October 29, 2025, Nexperia B.V. suspended direct wafer shipments to its China facility after payment for prior shipments was refused. This action followed a series of concerning events, including:
- Misappropriation of corporate seals without valid explanation
- Creation of unauthorized bank accounts and diversion of customer payments
- Distribution of unauthorized communications containing inaccurate information to customers, suppliers, and employees
In response, Nexperia has mobilized dedicated teams to establish alternative supply chain solutions aimed at minimizing disruption and maintaining product availability. While shipments to the Chinese facility have been suspended, wafer supply from other Nexperia sites in Europe and Asia continues without interruption.
All products manufactured outside of China are produced using genuine Nexperia wafers and materials, and adhere to the company’s established quality standards and intellectual property rights. These products remain fully compliant and continue to be delivered to customers worldwide.
Nexperia reaffirmed its long-term commitment to China and to its local employees, noting that its manufacturing operations in Dongguan remain a core component of its strategic roadmap. The company remains hopeful for a resolution and a return to normal operations.
In response to recent media speculation, Nexperia confirmed that Zhang Xuezheng (Wing) has been suspended from his role as CEO and as a director of the company, as mandated by the Dutch Enterprise Chamber ruling on October 7, 2025. He is no longer acting in any executive capacity at Nexperia.
Furthermore, the ruling placed substantially all voting rights of the shares in Nexperia—indirectly held by Wingtech—under the authority of an independent administrator. Any contrary claims are inaccurate.
Nexperia continues to comply fully with the Dutch government’s protection order, which remains in place for up to one year. While it imposes restrictions on major structural changes—such as relocations or executive dismissals—it does not interfere with normal business operations or production capacity, particularly as it relates to European interests.
Nexperia will continue to provide updates as the situation evolves. The company encourages its partners and customers to reach out directly with questions or to verify any external communications received.
Original – Nexperia
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Efficient Power Conversion Corporation (EPC) has announced the release of the EPC91120, a high-performance 3-phase brushless DC (BLDC) motor drive inverter designed specifically for integration into humanoid robot joints.
The EPC91120 leverages EPC’s EPC23102 ePower™ Stage IC to deliver superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter form factor. The board is optimized to fit directly into robotic motor assemblies, including compatibility with the mechanical dimensions of the Unitree A1 robot motor.
The EPC91120 evaluation board incorporates three EPC23102 monolithic GaN half-bridge ICs, along with an onboard microcontroller, current and voltage sensing, a magnetic encoder interface, and RS485 communication. Operating from 15 V to 55 V DC, the system supports up to 21 A peak (15 ARMS) continuous current and 42 A peak (30 ARMS) in pulsed operation.
With a 100 kHz PWM switching frequency and minimal dead time of just 50 nanoseconds, the EPC91120 delivers exceptional dynamic performance and system efficiency. These characteristics make it well suited for high-precision motion control in humanoid robotics and other advanced mechatronic applications.
Thermal and efficiency testing confirms strong performance under real-world conditions. Under natural convection cooling at 26°C ambient, the system achieves 7 ARMS per phase without a heatsink. When mounted within a humanoid joint motor casing used as a thermal sink, it can deliver up to 15 ARMS. Overall system efficiency exceeds 80 percent from DC input to mechanical output, validating the design’s suitability for high-torque, lightweight robotic joints.
“The EPC91120 showcases tightly integrated GaN power that makes humanoid robots lighter, faster, and smarter by embedding high-density inverter electronics within each motor joint,” said Alex Lidow, CEO of EPC.
The EPC91120 demonstrates the benefits of GaN integration in next-generation robotics, enabling compact, efficient, and scalable motor control for advanced autonomous systems.
Original – Efficient Power Conversion
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Vishay Intertechnology, Inc. has announced financial results for the fiscal third quarter ended September 27, 2025.
The company reported third-quarter revenue of $790.6 million. Gross margin was 19.5 percent, which included an approximate 150 basis point negative impact related to its Newport operations. Vishay reported a GAAP loss per share of $(0.06) and an adjusted earnings per share of $0.04.
The company’s book-to-bill ratio for the quarter was 0.97, with a ratio of 0.96 for semiconductors and 0.98 for passive components. The backlog at quarter-end stood at 4.4 months.
“Our third quarter revenue growth demonstrates Vishay’s alignment with high-growth markets including smart grid infrastructure, AI-related power requirements, automotive, and aerospace/defense, while the market overall continues to gradually recover,” said Joel Smejkal, President and CEO of Vishay. “The heavy investments in capacity expansion we have made over the past three years are enabling Vishay to capitalize on market upcycles in these high-growth segments, reliably meeting quick-turn delivery requirements while maintaining competitive lead times.”
For the fourth quarter of 2025, Vishay expects revenue in the range of $790 million, plus or minus $20 million. Gross profit margin is projected to be approximately 19.5 percent, plus or minus 50 basis points. This guidance includes an expected 150 to 175 basis point negative impact related to Newport.
Original – Vishay Intertechnology
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Infineon Technologies AG and SolarEdge Technologies, Inc. have announced a strategic collaboration to advance SolarEdge’s Solid-State Transformer (SST) platform for next-generation artificial intelligence (AI) and hyperscale data centers.
The partnership focuses on the co-design, optimization, and validation of a modular 2–5 megawatt (MW) SST building block. This platform combines Infineon’s advanced silicon carbide (SiC) switching technology with SolarEdge’s high-efficiency power conversion and control topology. The result is an SST solution delivering greater than 99 percent efficiency, supporting the transition to high-efficiency, DC-based data center infrastructure.
Solid-State Transformer technology is emerging as a foundational element in future 800-volt direct current (VDC) data center power architectures. It offers several key advantages, including significantly reduced size and weight, a lower CO₂ footprint, and faster deployment of power distribution infrastructure. The SST being jointly developed will enable direct medium-voltage (13.8–34.5 kV) to 800–1500 V DC conversion, streamlining the connection between public utility grids and high-performance compute environments.
“Collaborations like this are key to enabling the next generation of 800-volt DC data center power architectures and further driving decarbonization,” said Andreas Urschitz, Chief Marketing Officer at Infineon. “With high-performance SiC technology from Infineon, SolarEdge’s proven capabilities in power management and system optimization are enhanced, creating a strong foundation for the efficient, scalable, and reliable infrastructure demanded by AI-driven data centers.”
Shuki Nir, CEO of SolarEdge, added: “The AI revolution is redefining power infrastructure. It is essential that the data center industry is equipped with solutions that deliver higher levels of efficiency and reliability. SolarEdge’s deep expertise in DC architecture uniquely positions us to lead this transformation. Collaborating with Infineon brings world-class semiconductor innovation to our efforts to build smarter, more efficient energy systems for the AI era.”
As AI infrastructure drives a surge in global power demand, data center operators are increasingly focused on achieving greater efficiency, reliability, and sustainability. This collaboration builds on SolarEdge’s 15 years of leadership in DC-coupled architecture and high-efficiency power electronics, enabling it to expand into the data center sector with solutions optimized for grid-to-rack power distribution.
Infineon’s broad portfolio of semiconductor solutions—including technologies based on silicon, silicon carbide, and gallium nitride—is enabling power systems that reduce environmental impact and operating costs across the AI data center ecosystem.
Original – Infineon Technologies
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GaN / LATEST NEWS / WBGVeeco Secures Order for Propel®300 System to Advance 300mm GaN-on-Silicon Power Device Manufacturing
November 6, 2025
2 Min ReadVeeco Instruments Inc. has announced the receipt of a purchase order for its Propel®300 metal-organic chemical vapor deposition (MOCVD) system from a major integrated device manufacturer (IDM) specializing in power semiconductors. The system will be used for gallium nitride (GaN) epitaxial growth on 300 mm silicon (Si) wafers, underscoring Veeco’s established leadership in 300 mm MOCVD technology.
The order builds on Veeco’s long-standing expertise and history of Propel®300 shipments across the compound semiconductor sector. The platform’s qualification for 300 mm GaN-on-Si epitaxy specifically for power device applications represents a significant milestone in enabling broader commercialization of GaN technology.
“Qualifying Propel®300 for 300 mm GaN-on-Si epitaxy for power devices is a significant achievement in the path to widespread adoption of GaN technology,” stated Anil Vijayendran, Vice President of MOCVD Product Line Management at Veeco. “Moving from 200 mm to 300 mm enables customers to achieve 2.3 times more chips per wafer while utilizing existing 300 mm production infrastructure, which ultimately reduces device costs.”
GaN technology offers high efficiency and superior thermal and switching characteristics that can reduce the size and weight of power systems. These attributes are driving its adoption in critical sectors such as automotive, industrial, and data centers. According to Yole Group, the global GaN device market is projected to expand at a 35% compound annual growth rate from $555 million in 2025 to $2.5 billion by 2030. This growth is expected to be driven in part by rising power demands associated with artificial intelligence workloads and the corresponding need for more efficient power delivery systems.
The Propel®300 system, built on Veeco’s TurboDisc MOCVD technology, is designed for high-performance GaN epitaxy with industry-leading uniformity in thickness and doping. It also offers low defectivity, high productivity, and fully automated wafer handling. Combined with extended campaign runs that do not require in-situ cleaning and a user-friendly design, these features result in a highly competitive cost of ownership per wafer.
With this order, Veeco continues to reinforce its role as a key enabler of scalable GaN production and innovation for next-generation power electronics.
Original – Veeco Instruments
