Navitas Semiconductor has announced new progress in developing high-performance gallium nitride (GaN) and silicon carbide (SiC) power devices designed to enable NVIDIA’s 800 VDC data center architecture for next-generation AI factory computing platforms.
With AI workloads driving data center power consumption into the megawatt range, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architecture offers higher efficiency, reduced copper use, simplified thermal management, and compatibility with global low-voltage DC standards. The new system allows direct conversion from 13.8 kVAC utility power to 800 VDC, eliminating multiple conversion stages and improving overall system reliability.
Navitas’ GaNFast™ and GeneSiC™ technologies power every stage of the AI data center — from grid connection to GPU-level conversion. The company’s new 100 V GaN FETs deliver high power density and thermal performance in dual-sided cooled packages, optimized for DC-DC conversion on GPU boards. Manufactured using a 200 mm GaN-on-Si process in partnership with Power Chip, these devices support scalable, high-volume production.
In addition, Navitas’ 650 V GaN portfolio introduces new high-power GaN FETs and GaNSafe™ power ICs, which integrate drive, sensing, protection, and control functions for enhanced safety and robustness. GaNSafe™ features ultra-fast short-circuit protection, 2 kV ESD tolerance, programmable slew-rate control, and a simple 4-pin configuration for easy implementation.
Navitas’ GeneSiC™ SiC technology, based on its proprietary trench-assisted planar structure, provides high-speed, cool-running performance and wide voltage coverage up to 6,500 V. These devices are already being used in grid-tied inverters, large-scale energy storage systems, and U.S. Department of Energy (DoE) projects.
“As NVIDIA drives transformation in AI infrastructure, we’re proud to support this shift with GaN and SiC power solutions that enable the efficiency, scalability, and reliability required by next-generation data centers,” said Chris Allexandre, President and CEO of Navitas. “The move from legacy 54 V systems to 800 VDC is not just an evolution — it’s a complete transformation of data center power.”
Navitas’ innovations in GaN and SiC technologies reflect its expanded focus beyond mobile and consumer markets toward powering megawatt-scale AI factories, industrial platforms, and smart energy infrastructure with high-efficiency, high-density semiconductor solutions.
Original – Navitas Semiconductor