Littelfuse has announced the launch of the IX4352NEAU, an automotive-qualified low-side gate driver developed to meet the increasing performance demands of silicon carbide (SiC) MOSFET and IGBT control in electric vehicle (EV) powertrain and DC-DC converter applications.
The IX4352NEAU is the first AEC-Q100-qualified gate driver to feature an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or additional DC-DC converters typically used to prevent parasitic turn-on in high-speed power devices. This integration simplifies design, enhances switching performance, and lowers total system cost for automotive engineers.
“With the IX4352NEAU, our customers can design safer, more compact, and efficient power systems,” said June Zhang, Product Manager at Littelfuse. “This enables faster time to market and reduced system cost for advanced EV drivetrains and power conversion applications.”
The new device provides up to 9 A peak source and sink drive capability with separate pins for fine-tuned switching performance. It also integrates key protection features including DESAT detection, active soft shutdown, undervoltage lockout, thermal shutdown, and fault output for increased system reliability.
Designed to deliver consistent performance under demanding automotive conditions, the IX4352NEAU operates across a wide temperature range and maintains charge pump function during thermal shutdown. It is suitable for use in EV inverters, motor drives, and DC-DC converters, as well as in high-performance switching power supplies.
Compared to conventional low-side gate drivers, the IX4352NEAU offers higher power density, reduced component count, and improved switching behavior through its built-in charge pump regulator and adjustable negative bias. It represents a significant advancement for SiC- and IGBT-based automotive power systems, supporting the industry’s transition toward more efficient, reliable, and compact electrification solutions.
Original – Littelfuse