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Innoscience has announced its collaboration with NVIDIA to support the implementation of the 800 VDC rack power architecture, a major breakthrough in power distribution for AI data centers. Similar to the transition from 400 V to 800 V systems in electric vehicles, this new architecture dramatically increases efficiency, power density, and sustainability by reducing current flow sixteenfold compared to traditional 48 V systems. The result is significantly lower resistive losses, reduced copper consumption, and lower overall CO₂ emissions.
Current 48 V data center systems are approaching physical and thermal limits, with high copper demand and nearly half of total power lost to heat dissipation. The 800 VDC system overcomes these constraints, enabling scalability from kilowatt to megawatt levels for future AI clusters with hundreds of GPUs. However, achieving such high power density and efficiency—especially converting from 800 V down to 1 V—requires advanced semiconductor technologies such as gallium nitride (GaN).
Innoscience’s third-generation GaN devices are designed to meet the demanding requirements of this new power paradigm. Operating at switching frequencies near 1 MHz, these devices significantly reduce the size of magnetic and capacitive components while improving overall system efficiency.
Key advantages of Innoscience’s third-generation GaN include:
- Up to 80% reduction in driver losses and 50% lower switching losses compared to SiC devices, yielding a 10% decrease in total system power loss.
- Twice the power density on the 54 V output side, requiring only 16 GaN devices instead of 32 Si MOSFETs for equivalent conduction performance.
- 70% reduction in switching losses and a 40% increase in power output compared to silicon-based architectures.
- Scalability to support next-generation GPU platforms with improved dynamic response and reduced capacitor costs.
As the world’s only integrated GaN manufacturer (IDM) producing devices from 1200 V to 15 V, Innoscience offers a complete GaN-based conversion chain from 800 V to 1 V, delivering an all-GaN power solution across every stage of the data center power architecture.
Innoscience’s GaN devices are also proven for long-term reliability, passing extended high-temperature and stress tests, including 2000-hour dynamic HTOL and 175°C endurance validation. These tests confirm datacenter-grade durability with expected lifetimes exceeding 20 years.
With its third-generation GaN technology and collaboration with NVIDIA, Innoscience is helping drive the shift from kilowatt to megawatt AI racks—ushering in a new era of ultra-efficient, high-performance, and sustainable AI computing infrastructure.
Original – Innoscience Technology
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Following an emergency hearing on October 7, 2025, the Dutch Enterprise Chamber issued a provisional ruling that identified valid reasons to question the sound management of Nexperia under former CEO Zhang Xuezheng. As an immediate measure, Zhang Xuezheng has been suspended from his position and will no longer act as CEO of the company.
The Enterprise Chamber also decided that nearly all voting rights on Nexperia shares, indirectly held by parent company Wingtech Technology Co. Ltd., will now be managed by an independent administrator appointed by the court.
Under the new structure, CFO Stefan Tilger will assume the role of interim CEO, while Achim Kempe continues as COO. Ruben Lichtenberg, Chief Legal Officer, will serve as statutory director of both Nexperia Holding B.V. and Nexperia B.V., joined by Guido Dierick, who has been appointed non-executive director by the Enterprise Chamber.
Dutch Government Intervention
Citing serious managerial shortcomings, the Dutch Ministry of Economic Affairs determined that Nexperia’s European operations were being compromised, raising concerns about the availability of semiconductor products critical to the region’s industrial supply chain.In response, the Dutch government issued an emergency order under the Goods Availability Act (Wbg). For a period of one year, Nexperia is prohibited from relocating company parts, dismissing executives, or making strategic decisions without explicit government approval. The measure is designed to safeguard production continuity and protect Dutch and European economic security. Despite the restrictions, Nexperia stated that daily operations are expected to continue without disruption.
Export Control Developments
On September 29, 2025, the U.S. Bureau of Industry and Security (BIS) expanded export restrictions to entities at least 50 percent owned by those on the U.S. Entity List. Although Nexperia was not named directly, it is affected due to its ownership by Wingtech Technology, which was added to the list in December 2024. Nexperia has taken steps to maintain business continuity during the 60-day grace period provided by BIS and is confident a resolution can be reached.Separately, on October 4, 2025, the Chinese Ministry of Commerce imposed export controls preventing Nexperia China and its subcontractors from exporting certain finished components and sub-assemblies manufactured in China. Nexperia is actively engaging with Chinese authorities to obtain exemptions and mitigate the impact of the restrictions while maintaining close dialogue with government partners to ensure operational stability.
Original – Nexperia
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Navitas Semiconductor has announced new progress in developing high-performance gallium nitride (GaN) and silicon carbide (SiC) power devices designed to enable NVIDIA’s 800 VDC data center architecture for next-generation AI factory computing platforms.
With AI workloads driving data center power consumption into the megawatt range, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architecture offers higher efficiency, reduced copper use, simplified thermal management, and compatibility with global low-voltage DC standards. The new system allows direct conversion from 13.8 kVAC utility power to 800 VDC, eliminating multiple conversion stages and improving overall system reliability.
Navitas’ GaNFast™ and GeneSiC™ technologies power every stage of the AI data center — from grid connection to GPU-level conversion. The company’s new 100 V GaN FETs deliver high power density and thermal performance in dual-sided cooled packages, optimized for DC-DC conversion on GPU boards. Manufactured using a 200 mm GaN-on-Si process in partnership with Power Chip, these devices support scalable, high-volume production.
In addition, Navitas’ 650 V GaN portfolio introduces new high-power GaN FETs and GaNSafe™ power ICs, which integrate drive, sensing, protection, and control functions for enhanced safety and robustness. GaNSafe™ features ultra-fast short-circuit protection, 2 kV ESD tolerance, programmable slew-rate control, and a simple 4-pin configuration for easy implementation.
Navitas’ GeneSiC™ SiC technology, based on its proprietary trench-assisted planar structure, provides high-speed, cool-running performance and wide voltage coverage up to 6,500 V. These devices are already being used in grid-tied inverters, large-scale energy storage systems, and U.S. Department of Energy (DoE) projects.
“As NVIDIA drives transformation in AI infrastructure, we’re proud to support this shift with GaN and SiC power solutions that enable the efficiency, scalability, and reliability required by next-generation data centers,” said Chris Allexandre, President and CEO of Navitas. “The move from legacy 54 V systems to 800 VDC is not just an evolution — it’s a complete transformation of data center power.”
Navitas’ innovations in GaN and SiC technologies reflect its expanded focus beyond mobile and consumer markets toward powering megawatt-scale AI factories, industrial platforms, and smart energy infrastructure with high-efficiency, high-density semiconductor solutions.
Original – Navitas Semiconductor
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Analog Devices has introduced ADI Power Studio, a comprehensive suite of design tools that unifies modeling, simulation, component selection, and efficiency analysis for power management engineers. The platform provides an integrated design environment that accelerates the development of complex, power-dense electronic systems.
As part of this launch, ADI unveiled early versions of two new web-based tools — ADI Power Studio Planner and ADI Power Studio Designer — offering engineers a modern, intuitive experience for both system-level and IC-level power design. These tools complement ADI’s established portfolio, which includes LTspice, SIMPLIS, LTpowerCAD, LTpowerPlanner, EE-Sim, LTpowerPlay, and LTpowerAnalyzer.
Today’s power systems are increasingly complex, with multiple voltage domains and hundreds of interdependent power rails. ADI Power Studio addresses these challenges by providing a unified workflow that helps teams simulate real-world performance early in the design process. Engineers can perform accurate modeling, evaluate tradeoffs, generate bills of materials, and optimize architectures — all within a single ecosystem.
Robert Reay, Vice President and Fellow for Power Products at ADI, described the launch as a significant step forward. “ADI Power Studio is more than a set of tools — it’s a design ecosystem,” he said. “By integrating system- and IC-level capabilities into one platform, we’re enabling engineers to streamline design and deliver solutions to customers faster.”
ADI Power Studio Planner enables interactive, web-based power tree planning, allowing engineers to visualize architectures, calculate losses, and analyze efficiency with intelligent parametric search and design tradeoffs.
ADI Power Studio Designer provides IC-level optimization with guided workflows for selecting components, estimating performance, and running detailed efficiency simulations using LTspice and SIMPLIS before moving to hardware testing.Together, these tools create a connected workflow from concept to evaluation, reducing rework, shortening development cycles, and supporting engineers as they design next-generation, high-efficiency power systems.
Original – Analog Devices
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ROHM has published a new white paper exploring advanced semiconductor solutions that enable the next generation of AI data centers powered by the 800 VDC architecture. The paper highlights ROHM’s role as a leading innovator in wide bandgap technologies and system-level power design for large-scale, energy-efficient computing infrastructure.
Developed as part of ROHM’s ongoing collaboration with NVIDIA and other industry partners, the white paper outlines strategies for implementing 800 VDC power distribution across AI data centers—a shift expected to transform data center design by enhancing efficiency, scalability, and sustainability.
The 800 VDC architecture supports the evolution of gigawatt-scale AI factories by significantly improving power density and reducing conversion losses. ROHM’s broad portfolio of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) power devices, combined with its analog IC expertise, positions the company to deliver optimized solutions for each stage of power conversion.
The paper details how the traditional AC-DC conversion process, typically performed inside server racks, can be relocated to a centralized power rack under the 800 VDC system. This approach simplifies design, improves thermal performance, and allows higher-density configurations for GPU-heavy AI workloads.
ROHM’s EcoSiC™ and EcoGaN™ device families are featured prominently as key enablers of this transition. The EcoSiC™ series provides industry-leading low on-resistance and top-side cooling modules for high-power AI servers, while the EcoGaN™ series integrates GaN performance with ROHM’s proprietary analog IC technologies, including Nano Pulse Control™, enabling fast, precise, and stable high-frequency operation.
Through collaborations with NVIDIA, Delta Electronics, and data center operators, ROHM continues to drive innovation in wide bandgap semiconductors and analog control technologies. Its new white paper underscores the company’s commitment to building efficient, reliable, and sustainable AI data center infrastructure based on 800 VDC power delivery systems.
Original – ROHM
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Littelfuse has announced the launch of the IX4352NEAU, an automotive-qualified low-side gate driver developed to meet the increasing performance demands of silicon carbide (SiC) MOSFET and IGBT control in electric vehicle (EV) powertrain and DC-DC converter applications.
The IX4352NEAU is the first AEC-Q100-qualified gate driver to feature an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or additional DC-DC converters typically used to prevent parasitic turn-on in high-speed power devices. This integration simplifies design, enhances switching performance, and lowers total system cost for automotive engineers.
“With the IX4352NEAU, our customers can design safer, more compact, and efficient power systems,” said June Zhang, Product Manager at Littelfuse. “This enables faster time to market and reduced system cost for advanced EV drivetrains and power conversion applications.”
The new device provides up to 9 A peak source and sink drive capability with separate pins for fine-tuned switching performance. It also integrates key protection features including DESAT detection, active soft shutdown, undervoltage lockout, thermal shutdown, and fault output for increased system reliability.
Designed to deliver consistent performance under demanding automotive conditions, the IX4352NEAU operates across a wide temperature range and maintains charge pump function during thermal shutdown. It is suitable for use in EV inverters, motor drives, and DC-DC converters, as well as in high-performance switching power supplies.
Compared to conventional low-side gate drivers, the IX4352NEAU offers higher power density, reduced component count, and improved switching behavior through its built-in charge pump regulator and adjustable negative bias. It represents a significant advancement for SiC- and IGBT-based automotive power systems, supporting the industry’s transition toward more efficient, reliable, and compact electrification solutions.
Original – Littelfuse
