STMicroelectronics has revealed a complete prototype of its new power delivery system designed to support NVIDIA’s 800 VDC architecture for next-generation AI data centers. The company’s announcement underscores its leadership in developing semiconductor technologies that meet the rising power and efficiency demands of large-scale AI computing infrastructure.
As AI workloads grow rapidly, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architectures enables megawatt-scale compute racks that are more efficient, require less copper, and simplify overall system design. STMicroelectronics is contributing to this transition with a portfolio that integrates silicon carbide (SiC), gallium nitride (GaN), and silicon technologies optimized for high-voltage, high-efficiency applications.
At the OCP Global Summit 2025, ST presented a major development milestone: a compact 12 kW GaN-based LLC power delivery board roughly the size of a smartphone. Operating from an 800 V input and switching at 1 MHz, the prototype achieved more than 98 percent efficiency and a record power density of over 2,600 W/in³ at 50 V output.
The new system addresses key design challenges in power density, thermal management, efficiency, and reliability—critical factors for deploying megawatt-scale AI compute systems while lowering infrastructure complexity and cost.
STMicroelectronics’ achievement represents a significant step forward in enabling high-performance, energy-efficient power delivery solutions for the emerging generation of hyperscale AI data centers built on 800 VDC architectures.
Original – STMicroelectronics