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Infineon Technologies has announced its support for NVIDIA’s 800 VDC power architecture, introduced at Computex 2025, marking a major step toward creating more efficient, scalable, and serviceable AI data centers. As the power demands of artificial intelligence infrastructure continue to grow exponentially, the move from traditional 54 V systems to centralized 800 VDC architectures is becoming essential to improve energy efficiency, reduce losses, and increase overall system reliability.
Adam White, Division President of Power & Sensor Systems at Infineon Technologies, emphasized the company’s role in shaping this transformation. “There is no AI without power,” he stated. “We are working with NVIDIA on intelligent power systems that not only meet the demands of future AI data centers but also minimize system downtimes. By driving the shift to high-density, reliable, and safe 800 VDC architectures, we are redefining how power is delivered to AI infrastructure and maximizing the value of every watt.”
Infineon’s collaboration with NVIDIA focuses on ensuring both safety and serviceability in 800 VDC-powered systems. One key innovation is the integration of hot-swap controller functionality, which enables server boards to be safely replaced or maintained while the rest of the rack continues operating. This solution, based on Infineon’s CoolSiC™ JFET technology, allows controlled pre-charging and discharging of server boards, preventing electrical hazards and eliminating costly downtime.
As AI data center power requirements rise — with rack power expected to reach 500 kilowatts and potentially 1 megawatt by the end of the decade — Infineon is developing next-generation power conversion systems that combine its Intermediate Bus Converter (IBC) and high-frequency gallium nitride (GaN) switching technologies. These solutions support efficient two- and three-stage power conversion from the grid to the server core, achieving up to 98 percent efficiency per conversion stage.
The company’s holistic approach extends beyond power conversion to include protection and control components that enhance reliability and sustainability. By leveraging silicon carbide (SiC), GaN, and silicon technologies, Infineon provides a complete portfolio of semiconductor solutions to enable safe and efficient megawatt-scale AI server racks.
Infineon’s experts will further discuss power conversion solutions for future server boards operating directly from high-voltage DC at the OCP Global Summit 2025 and explore advancements in AI data center power systems at OktoberTech Silicon Valley 2025.
With these developments, Infineon continues to position itself at the forefront of the semiconductor industry’s drive toward powering the AI revolution with smarter, more sustainable, and higher-performance energy systems.
Original – Infineon Technologies
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Texas Instruments (TI) has introduced a new suite of power-management technologies and design resources to address the increasing energy demands of artificial intelligence (AI) data centers. The announcement was made ahead of the Open Compute Project (OCP) Global Summit in San Jose, California, where TI will showcase its latest innovations supporting the industry’s transition from 12 V and 48 V power systems to high-efficiency 800 VDC architectures.
As AI workloads grow and IT rack power approaches the megawatt scale, TI is collaborating with NVIDIA to develop advanced power-management devices optimized for the emerging 800 VDC data center standard. These new solutions aim to deliver higher efficiency, improved power density, and scalable energy conversion for next-generation AI computing infrastructure.
Among the highlights of TI’s announcement are several key resources and reference designs:
- White paper: “Power delivery trade-offs when preparing for the next wave of AI computing growth.” The paper explores design strategies for high-efficiency, high-density power delivery systems, emphasizing the technical benefits and challenges of adopting 800 VDC architectures.
- 30 kW AI server power-supply reference design: A dual-stage design featuring a three-phase, three-level flying capacitor PFC converter paired with dual delta-delta three-phase LLC converters. The system can be configured for a single 800 V output or split supplies to meet demanding AI workloads.
- Dual-phase smart power stage (CSD965203B): Delivers up to 100 A per phase and offers the highest peak power density in its class, allowing designers to scale power delivery efficiently across compact PCBs.
- Dual-phase smart power module (CSDM65295): Provides up to 180 A of peak output current in a 9 mm × 10 mm × 5 mm package, integrating two inductors and supporting trans-inductor voltage regulation for superior thermal and electrical performance.
- GaN intermediate bus converter (LMM104RM0): Offers up to 1.6 kW of output power with over 97.5 percent conversion efficiency in a compact quarter-brick form factor, supporting high light-load performance and active current sharing between modules.
According to Chris Suchoski, Sector General Manager for Data Centers at TI, the evolution of AI data centers requires scalable and efficient power infrastructures. “With the growth of AI, data centers are evolving from simple server rooms to highly sophisticated power infrastructure hubs,” he said. “Scalable power infrastructure and higher power efficiency are essential to meet these demands and drive future innovation. With TI devices, designers can build next-generation solutions that enable the transition to 800 VDC.”
TI’s participation at the OCP Global Summit will include live demonstrations, technical sessions, and presentations exploring advanced data center power architectures. The company continues to position itself as a key technology partner in developing efficient, reliable, and scalable power solutions that support the ongoing transformation of AI data centers worldwide.
Original – Texas Instruments
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Renesas Electronics Corporation has announced its support for NVIDIA’s 800 VDC power architecture, introducing advanced GaN-based power technologies designed to enhance efficiency, scalability, and energy optimization in next-generation AI data centers.
As AI workloads accelerate and data center power consumption reaches hundreds of megawatts, the industry is moving toward higher-voltage, direct-current systems that reduce energy loss and simplify power distribution. Wide bandgap semiconductors such as gallium nitride (GaN) are emerging as the key enabler of this transformation, offering faster switching speeds, lower conduction losses, and superior thermal performance compared to traditional silicon devices.
Renesas’ GaN-based power solutions are engineered to support efficient DC/DC conversion across a wide range of operating voltages, from 48 V up to 400 V, with the capability to scale to 800 V in stacked configurations. Using the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve efficiencies of up to 98 percent while maintaining high power density and compact form factors.
For the AC/DC front end, Renesas employs bi-directional GaN switches that simplify rectifier design and increase system-level efficiency. The company’s broader power component lineup—including REXFET MOSFETs, controllers, and drivers—complements these converters, providing a complete power delivery ecosystem for high-performance AI infrastructure.
“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, Senior Vice President and General Manager of Power at Renesas. “Renesas is powering the future of AI with scalable, high-density energy solutions built on our advanced GaN and MOSFET technologies, ensuring the performance and efficiency required for the next wave of AI innovation.”
Renesas has also released a white paper detailing its approach to 800 VDC power distribution and conversion, exploring how its GaN-based solutions support the evolution of energy-efficient, large-scale AI data center infrastructure.
Original – Renesas Electronics
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STMicroelectronics has revealed a complete prototype of its new power delivery system designed to support NVIDIA’s 800 VDC architecture for next-generation AI data centers. The company’s announcement underscores its leadership in developing semiconductor technologies that meet the rising power and efficiency demands of large-scale AI computing infrastructure.
As AI workloads grow rapidly, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architectures enables megawatt-scale compute racks that are more efficient, require less copper, and simplify overall system design. STMicroelectronics is contributing to this transition with a portfolio that integrates silicon carbide (SiC), gallium nitride (GaN), and silicon technologies optimized for high-voltage, high-efficiency applications.
At the OCP Global Summit 2025, ST presented a major development milestone: a compact 12 kW GaN-based LLC power delivery board roughly the size of a smartphone. Operating from an 800 V input and switching at 1 MHz, the prototype achieved more than 98 percent efficiency and a record power density of over 2,600 W/in³ at 50 V output.
The new system addresses key design challenges in power density, thermal management, efficiency, and reliability—critical factors for deploying megawatt-scale AI compute systems while lowering infrastructure complexity and cost.
STMicroelectronics’ achievement represents a significant step forward in enabling high-performance, energy-efficient power delivery solutions for the emerging generation of hyperscale AI data centers built on 800 VDC architectures.
Original – STMicroelectronics
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Innoscience, United Automotive Electronic Systems (UAES), and NOVOSENSE Microelectronics have entered into a strategic cooperation agreement to jointly develop next-generation intelligent integrated Gallium Nitride (GaN) products for new energy vehicles (NEVs). The collaboration aims to enhance reliability, efficiency, and power density in automotive power electronics, paving the way for wider GaN adoption across the industry.
GaN: Transforming Automotive Power Systems
Gallium Nitride is emerging as a key enabler of automotive electrification. Compared to traditional silicon-based devices, GaN offers superior switching performance, higher power density, and greater efficiency, allowing for smaller, lighter, and more energy-efficient vehicle systems. These advantages directly address the industry’s growing focus on electrification, lightweight design, and sustainability.Combining Expertise Across the Value Chain
Through joint research, development, and validation, the three companies will address challenges related to performance, reliability, and cost in GaN-based automotive systems. Innoscience brings world-class GaN device technology, UAES contributes extensive system integration and application expertise, and NOVOSENSE adds advanced analog and mixed-signal IC design capabilities. Together, they aim to deliver commercially viable, high-performance GaN solutions tailored to the evolving needs of NEV manufacturers.Dr. Jingang Wu, CEO of Innoscience, emphasized that the collaboration aligns device innovation with real-world automotive requirements, enabling GaN’s full potential in vehicle electrification. Dr. Xiaolu Guo, Deputy General Manager of UAES, highlighted the importance of combining system and component-level expertise to accelerate GaN industrialization. NOVOSENSE founder and CEO Shengyang Wang noted that this alliance strengthens cooperation across the entire value chain, ensuring both technological advancement and market impact.
Accelerating the Future of Electrified Mobility
This strategic partnership represents a significant step forward for the automotive semiconductor industry. By leveraging complementary strengths, Innoscience, UAES, and NOVOSENSE are creating a powerful ecosystem to advance GaN innovation, strengthen the NEV value chain, and accelerate the transition toward more efficient and sustainable electric mobility solutions.Original – Innoscience Technology
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EPC has introduced a new high-efficiency power converter designed to accelerate the adoption of 800 VDC power distribution in next-generation AI data centers.
As artificial intelligence workloads continue to expand, future data centers—often referred to as AI factories—will require megawatt-scale rack-level power delivery systems. To meet these demands, EPC has developed a compact, low-cost, 6 kW GaN-based converter that steps down 800 VDC to 12.5 VDC using an Input Series Output Parallel (ISOP) topology.
The converter delivers multiple key advantages:
- High power density: The design occupies less than 5,000 mm² of board space and measures only 8 mm in height, making it ideal for space-constrained AI server boards.
- High efficiency: By converting power close to the load, the system minimizes bussing losses and enhances overall energy efficiency.
- Simplified architecture: Moving directly from AC to 800 VDC at the rack level and then stepping down to 12.5 VDC at the board eliminates unnecessary conversion stages, improving scalability and reducing system complexity.
EPC’s GaN-based approach supports the evolution of AI data centers toward more compact, efficient, and sustainable infrastructure.
“GaN is an essential technology for the 800 VDC ecosystem,” said Alex Lidow, CEO of EPC. “Our collaboration with NVIDIA focuses on delivering compact, efficient, and cost-effective board-level power conversion to support the next generation of AI factories operating at gigawatt scale.”
The development underscores EPC’s commitment to advancing GaN technology as a cornerstone for future high-voltage, high-efficiency power architectures in AI and high-performance computing environments.
Original – Efficient Power Conversion
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Alpha and Omega Semiconductor (AOS) has announced its full support for NVIDIA’s newly introduced 800 VDC power architecture, designed to power the next generation of AI data centers with megawatt-scale racks. The company’s portfolio of silicon carbide (SiC) and gallium nitride (GaN) power devices is strategically developed to meet the performance, efficiency, and density requirements of this next-generation infrastructure.
The transition from traditional 54 V to 800 VDC power distribution marks a major redesign in data center architecture. This shift reduces the number of power conversion stages, improves energy efficiency, lowers copper usage, and enhances system reliability. The new architecture also demands advanced wide bandgap semiconductor technologies capable of operating at higher voltages and switching frequencies while maintaining maximum efficiency.
Ralph Monteiro, Senior Vice President of Power IC and Discrete Product Lines at AOS, stated that the company is collaborating with NVIDIA to develop 800 VDC power semiconductors tailored for high-efficiency power delivery across all conversion stages—from AC-to-DC input to DC-to-DC rack-level conversion.
AOS’ wide bandgap expertise positions the company as a key technology enabler for this transition. Its SiC and GaN devices are optimized for each stage of the new 800 VDC architecture:
- High-voltage conversion: AOS’s SiC devices, such as the Gen3 AOM020V120X3 and the topside-cooled AOGT020V120X2Q, support direct conversion from 13.8 kV AC grid input to 800 VDC, simplifying the power chain and improving system efficiency.
- High-density DC-DC conversion: Inside the racks, AOS’s 650 V and 100 V GaN FETs, including the AOGT035V65GA1 and AOFG018V10GA1, enable compact, high-frequency converters that free up rack space and improve cooling performance.
- Packaging innovations: The company’s stacked-die MOSFETs and GaN devices, such as the AOPL68801, share common footprints, allowing designers flexibility in cost and efficiency trade-offs in secondary-side power conversion.
- Multiphase controllers: AOS also provides multi-rail 16-phase controllers for efficient voltage regulation from 54 V to 12 V and beyond, supporting AI processor power delivery.
By supplying key technologies for each conversion stage, AOS enables up to a 5 percent increase in overall power efficiency, a 45 percent reduction in copper usage, and significant improvements in thermal and maintenance performance.
AOS’s continued investment in SiC and GaN development underlines its commitment to driving the scalability, sustainability, and performance of next-generation AI data centers built on 800 VDC power infrastructure.
Original – Alpha and Omega Semiconductor
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Power Integrations has unveiled new details on the capabilities of its PowiGaN gallium-nitride technology designed to power the next generation of AI data centers. The company outlined the performance and system-level advantages of its 1250 V and 1700 V PowiGaN devices in a white paper released at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the emerging 800 VDC data center architecture.
The paper demonstrates how Power Integrations’ high-voltage PowiGaN HEMTs enable compact, high-efficiency 800 VDC power conversion systems with efficiency exceeding 98 percent. The company’s 1250 V PowiGaN switch delivers superior performance compared to stacked 650 V GaN FETs and conventional 1200 V silicon carbide (SiC) devices, offering greater power density, lower switching losses, and proven field reliability.
Power Integrations also highlighted its InnoMux-2 EP integrated circuits as an advanced solution for auxiliary power systems in 800 VDC data center designs. Featuring an integrated 1700 V PowiGaN switch, the device supports input voltages up to 1000 VDC and achieves over 90 percent efficiency in compact, fanless liquid-cooled architectures.
According to Roland Saint-Pierre, vice president of product development at Power Integrations, the industry’s move toward 800 VDC architectures addresses rising power demands in AI data centers by simplifying rack designs, improving space utilization, and reducing copper use. He emphasized that the company’s 1250 V and 1700 V PowiGaN devices are ideally suited to meet the efficiency, reliability, and power-density requirements of these high-performance systems.
Power Integrations is currently the only company supplying 1250 V and 1700 V GaN switches in high-volume production. Since introducing its first GaN ICs in 2018, the company has shipped more than 175 million GaN devices across a wide range of applications, including data centers, electric vehicles, and fast chargers.
The introduction of PowiGaN technology for 800 VDC data centers marks a significant step toward more efficient, scalable, and sustainable power conversion systems to support the rapidly growing energy demands of AI computing infrastructure.
Original – Power Integrations
