Imec Launches 300mm GaN Power Electronics Program with Industry Leaders as Founding Partners

Imec, the Belgian research and innovation hub specializing in nanoelectronics and digital technologies, has announced the launch of a new 300mm gallium nitride (GaN) open innovation program for power electronics. AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco have joined as the first partners in this initiative, which aims to accelerate the development of both low- and high-voltage GaN power devices.

The program, part of imec’s Industrial Affiliation Program (IIAP) on GaN power electronics, focuses on advancing 300mm GaN epitaxial growth and high electron mobility transistor (HEMT) process flows. The use of larger 300mm substrates is expected to lower GaN device manufacturing costs while enabling more advanced, high-performance power electronics such as compact, energy-efficient converters for CPUs and GPUs.

Imec’s new initiative builds on the success of 200mm GaN technology, extending its expertise to larger wafer diameters to support industrial-scale production. The move to 300mm wafers allows GaN technology to access state-of-the-art CMOS-compatible equipment, paving the way for the next generation of low-voltage p-GaN gate HEMTs for power distribution in computing and data applications.

The program’s first phase will establish a baseline lateral p-GaN HEMT platform for low-voltage applications (100 V and beyond), using 300mm Si(111) substrates. Development work currently focuses on key process modules such as p-GaN etching and Ohmic contact formation. Later stages will target high-voltage applications above 650 V, utilizing 300mm QST engineered substrates that offer mechanical strength and bow control suitable for advanced CMOS-compatible processing.

According to Stefaan Decoutere, fellow and program director of GaN power electronics at imec, the transition to 300mm wafers offers advantages beyond cost reduction. It enables the creation of more sophisticated GaN devices, supporting compact and efficient power solutions for applications like automotive on-board chargers, solar inverters, and power systems in telecom and AI data centers.

Imec expects to complete installation of its full 300mm GaN processing capabilities in its cleanroom by the end of 2025. The program’s success relies on strong collaboration between partners across the value chain, combining expertise in epitaxy, process integration, design, and packaging to drive the next wave of GaN power innovation.

Original – Imec